Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
An artificial flexible visual memory system based on an UV‐motivated memristor
For the mimicry of human visual memory, a prominent challenge is how to detect and store
the image information by electronic devices, which demands a multifunctional integration to …
the image information by electronic devices, which demands a multifunctional integration to …
[PDF][PDF] Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory
DOI: 10.1002/adma. 201603293 formation and dissolution in the negative-RESET process,
which may cause the device reliability issues, ie, programming failure. Although the dynamic …
which may cause the device reliability issues, ie, programming failure. Although the dynamic …
On‐demand reconfiguration of nanomaterials: when electronics meets ionics
Rapid advances in the semiconductor industry, driven largely by device scaling, are now
approaching fundamental physical limits and face severe power, performance, and cost …
approaching fundamental physical limits and face severe power, performance, and cost …
[HTML][HTML] Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities
The ability for artificially reproducing human brain type signals' processing is one of the main
challenges in modern information technology, being one of the milestones for developing …
challenges in modern information technology, being one of the milestones for developing …
Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two‐dimensional layered materials
Reversible chemical and structural changes induced by ionic motion and reaction in
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …
Effects of moisture and redox reactions in VCM and ECM resistive switching memories
I Valov, T Tsuruoka - Journal of Physics D: Applied Physics, 2018 - iopscience.iop.org
Redox-based memristive devices (ReRAM) have been intensively studied in recent years
with respect to their functions as applications in non-volatile memories, selector devices and …
with respect to their functions as applications in non-volatile memories, selector devices and …
Flexible artificial synaptic devices based on collagen from fish protein with spike‐timing‐dependent plasticity
N Raeis‐Hosseini, Y Park… - Advanced Functional …, 2018 - Wiley Online Library
Neuromorphic and cognitive computing with a capability of analyzing complicated
information is explored as a new paradigm of intelligent systems. An implementation of a …
information is explored as a new paradigm of intelligent systems. An implementation of a …
Design of materials configuration for optimizing redox‐based resistive switching memories
Redox‐based resistive random access memories (ReRAMs) are based on electrochemical
processes of oxidation and reduction within the devices. The selection of materials and …
processes of oxidation and reduction within the devices. The selection of materials and …