The development of transparent p‐type oxide semiconductors with good performance may
be a true enabler for a variety of applications where transparency, power efficiency, and …

Over the past several decades, tin monoxide (SnO) has been studied extensively as a p-type
thin film transistor (TFT). However, its TFT performance is still insufficient for practical use …

In this article, we report the growth of zinc‐tin nitride (ZnSnN2) thin films as a potential
absorber for photovoltaic applications by fabricating a heterojunction of n‐ZnSnN2/p‐SnO …

The electronic and atomic structures of amorphous transparent tin oxides have been
investigated by a combination of X-ray spectroscopy and atomistic calculations. Crystalline …

SnO x thin films were successfully deposited by the thermal atomic layer deposition (ALD)
method using N, N′-tert-butyl-1, 1-dimethylethylenediamine stannylene (II) as a precursor …

The pn junction is a simple but versatile structure used in many electronic devices such as
diodes, junction transistors, solar cells and light-emitting diodes.[1] Apart from the rectifying …

Developing transparent p-type oxide semiconductor has been the long-standing subject of
interest for optoelectronic devices, but hindered by the strongly localized valence band (VB) …

Recently, SnO has attracted more and more attention, because it is a bipolar electronic
material holding great potential in the design of pn junction. In this paper, we examine the …

When it comes to providing the unusual combination of optical transparency, p-type
conductivity, and relatively high mobility, Sn 2+-based oxides are promising candidates …

Among semiconducting materials transparent semiconducting oxides have gained
increasing attention within the last decade. While most of these oxides can be only doped n …