Perspective on III–V barrier detectors
PC Klipstein - Applied Physics Letters, 2022 - pubs.aip.org
In a photodiode made from a narrow bandgap III–V material such as InSb, the dark current is
usually dominated by thermal generation-recombination (GR) in the depletion region. In an …
usually dominated by thermal generation-recombination (GR) in the depletion region. In an …
Review of virtual substrate technologies for 6.3 Ångström lattice constants
SP Svensson, NA Mahadik, G Kipshidze… - Journal of Vacuum …, 2023 - pubs.aip.org
Virtual substrates with lattice constants in the range mid-way between InAs and InSb have
been developed using molecular beam epitaxy (MBE). The III–V alloys in this range are of …
been developed using molecular beam epitaxy (MBE). The III–V alloys in this range are of …
[HTML][HTML] Short-period InAsSb-based strained layer superlattices for high quantum efficiency long-wave infrared detectors
Infrared detector barrier heterostructures with strained layer superlattice (SLS) absorbers
with different periods were compared. The first was a reference using a conventional barrier …
with different periods were compared. The first was a reference using a conventional barrier …
[HTML][HTML] Machine-learning-assisted optimization of Ga-free type-II superlattices for enhanced vertical hole mobility
J Glennon, E Bellotti - Journal of Applied Physics, 2024 - pubs.aip.org
Gaussian process regression is used to develop a model for predicting carrier transport in
superlattice (SL) structures grown on GaSb and 6.2 Å substrates. This model is used to …
superlattice (SL) structures grown on GaSb and 6.2 Å substrates. This model is used to …