Luminescence properties of defects in GaN
MA Reshchikov, H Morkoç - Journal of applied physics, 2005 - pubs.aip.org
Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …
have gained an unprecedented attention due to their wide-ranging applications …
[HTML][HTML] Materials challenges for the Starshot lightsail
The Starshot Breakthrough Initiative established in 2016 sets an audacious goal of sending
a spacecraft beyond our Solar System to a neighbouring star within the next half-century. Its …
a spacecraft beyond our Solar System to a neighbouring star within the next half-century. Its …
Impact ionization coefficients and critical electric field in GaN
Avalanche multiplication characteristics in a reverse-biased homoepitaxial GaN p–n junction
diode are experimentally investigated at 223–373 K by novel photomultiplication …
diode are experimentally investigated at 223–373 K by novel photomultiplication …
Optical properties of epitaxially grown zinc oxide films on sapphire by pulsed laser deposition
ZnO thin films were epitaxially grown on c-sapphire substrates by pulsed laser deposition at
substrate temperatures of 500–800° C. The crystal structure of ZnO films follow the epitaxial …
substrate temperatures of 500–800° C. The crystal structure of ZnO films follow the epitaxial …
Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes
Light extraction efficiency (LEE) in AlGaN deep-ultraviolet (DUV) light-emitting diodes
(LEDs) is investigated using finite-difference time-domain simulations. For flip-chip and …
(LEDs) is investigated using finite-difference time-domain simulations. For flip-chip and …
Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff
MKKMK Kelly, RPVRP Vaudo… - Japanese journal of …, 1999 - iopscience.iop.org
Free-standing GaN, nearly equal in area to the original 2 inch wafer, was produced from 250–
300 µm thick GaN films grown on sapphire by hydride vapor phase epitaxy (HVPE). The …
300 µm thick GaN films grown on sapphire by hydride vapor phase epitaxy (HVPE). The …
Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices
A review is presented of the fabrication, operation, and applications of rare-earth-doped
GaN electroluminescent devices (ELDs). GaN: RE ELDs emit light due to impact excitation of …
GaN electroluminescent devices (ELDs). GaN: RE ELDs emit light due to impact excitation of …
Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and Al x Ga 1− x N thin films at low temperatures
The authors report on the use of hollow cathode plasma for low-temperature plasma-
assisted atomic layer deposition (PA-ALD) of crystalline AlN, GaN and AlxGa1− xN thin films …
assisted atomic layer deposition (PA-ALD) of crystalline AlN, GaN and AlxGa1− xN thin films …
Pulsed laser annealing of Be-implanted GaN
HT Wang, LS Tan, EF Chor - Journal of applied physics, 2005 - pubs.aip.org
Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid
thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been …
thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been …
Nonpolar InGaN/GaN core–shell single nanowire lasers
We report lasing from nonpolar pin InGaN/GaN multi-quantum well core–shell single-
nanowire lasers by optical pumping at room temperature. The nanowire lasers were …
nanowire lasers by optical pumping at room temperature. The nanowire lasers were …