Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

Semiconductor heteroepitaxy involves a wealth of qualitatively different, competing
phenomena. Examples include three-dimensional island formation, injection of dislocations …

The conserved Swift-Hohenberg equation with cubic nonlinearity provides the simplest
microscopic description of the thermodynamic transition from a fluid state to a crystalline …

An epitaxial thin film can undergo surface instability and break up into discrete islands. The
stress field and the interface interaction have profound effects on the dynamics of surface …

A nonlinear evolution equation for surface-diffusion-driven Asaro-Tiller-Grinfeld instability of
an epitaxially strained thin solid film on a solid substrate is derived in the case where the film …

The evolution of stress in silicon, induced by argon ion bombardment up to fluences of 4.5×
1014ions/cm2, is studied using molecular dynamics simulations with empirical interatomic …

Based on simulation results and theoretical analysis according to an atomistically informed
continuum-scale model for the surface morphological response of tungsten plasma-facing …

A strained epitaxial film deposited on a deformable substrate undergoes a morphological
instability, relaxing the elastic energy by surface diffusion. The nonlinear dynamical equation …

We consider a continuum model for the evolution of an epitaxially strained dislocation-free
thin solid film on a deformable substrate in the absence of vapor deposition. By using a thin …

The evolution of quantum dots (QDs), resulting from the Asaro-Tiller-Grinfeld instability of an
epitaxially strained thin solid film deposited on a solid elastic substrate, is considered. For a …