Beta gallium oxide (β-Ga 2 O 3) has attracted significant attention for applications in power
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …

The widely discussed single‐atom catalysts (SACs) are regarded as a kind of attractive
material for sulfate radical‐based advanced oxidation processes (SR‐AOPs) owing to their …

Avalanche and surge robustness involve fundamental carrier dynamics under high electric
field and current density. They are also prerequisites of any power device to survive …

Previous research has shown that the hybridization of N 2p and O 2p orbitals effectively
suppresses the electrical activity of oxygen vacancies in oxide semiconductors. However …

Large-scale growth and heterogeneous integration with existing semiconductors are the
main obstacles to the application of metal halide perovskites in optoelectronics. Herein, a …

This work reports a gallium indium alloy (EGaIn)‐doped SiBOC ceramic that possesses a
unique liquid‐metal‐in‐ceramic feature. The low‐viscosity liquid nature of gallium‐based …

This work demonstrates vertical Ga2O3 Schottky barrier diodes (SBDs) with a novel junction
termination extension (JTE) comprising multiple layers of sputtered p-type nickel oxide …

NiO/β-Ga2O3 vertical rectifiers exhibit near-temperature-independent breakdown voltages
(VB) of> 8 kV to 600 K. For 100 μm diameter devices, the power figure of merit (VB) 2/RON …

Photocatalytic conversion of H2O and CO2 into solar fuels is considered to be a green and
renewable technology while photocatalytic performance is hampered by the severe …

Efficient, ultrahigh-voltage power-conversion electronics (with voltages> 20 kV) require
semiconductors with an energy gap much larger than that of silicon. The wide-bandgap …