Semiconductor chip

B Young, SH Yeong, YM Lin, CY Chang… - US Patent …, 2024 - Google Patents
A semiconductor chip including a semiconductor substrate, an interconnect structure and a
memory cell array is provided. The semiconductor substrate includes a logic circuit. The …

Static random-access memory cell design

B Vincent, J Ervin - US Patent 11,158,368, 2021 - Google Patents
US11158368B2 - Static random-access memory cell design - Google Patents US11158368B2
- Static random-access memory cell design - Google Patents Static random-access memory …

Semiconductor device and electronic device

Y Kurokawa, M Kozuma, T Aoki - US Patent 11,875,837, 2024 - Google Patents
2021-12-10 Assigned to SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
reassignment SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ASSIGNMENT OF …

Stacked integration of III-N transistors and thin-film transistors

HW Then, M Radosavljevic, S Dasgupta… - US Patent …, 2022 - Google Patents
Primary Examiner—Scott B Geyer (74) Attorney, Agent, or Firm—Akona IP PC (57)
ABSTRACT Disclosed herein are integrated circuit (IC) structures, pack ages, and devices …

Thin-film transistor memory with glass support at the back

AA Sharma, W Gomes, T Kamgaing - US Patent App. 17/325,617, 2022 - Google Patents
Embodiments of the present disclosure are based on recog nition that using a glass support
structure at the back side of an IC structure with TFT memory may advantageously reduce …

Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same

B Young, M Manfrini, SH Yeong, HJ Chia… - US Patent …, 2023 - Google Patents
2021-12-02 Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
LIMITED reassignment TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY …

Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same

B Young, M Manfrini, SH Yeong, HJ Chia… - US Patent …, 2024 - Google Patents
A memory device includes metal interconnect structures embedded within dielectric material
layers that overlie a top surface of a substrate, a thin film transistor embedded in a first …

Memory device having 2-transistor vertical memory cell

S Pulugurtha, DVN Ramaswamy - US Patent 11,839,073, 2023 - Google Patents
Some embodiments include apparatuses and methods of forming the apparatuses. One of
the apparatuses includes a memory cell, first, second, and third data lines, and first and …

Semiconductor structure with a first lower electrode layer and a second lower electrode layer and method for manufacturing same

D Xiao, L Zhang - US Patent 12,137,550, 2024 - Google Patents
A semiconductor structure and a method for manufacturing same. The semiconductor
structure includes a storage unit, which includes: a first dielectric layer and a metal bit line …

Backend memory with air gaps in upper metal layers

AA Sharma, AB Chen, W Gomes… - US Patent App. 17 …, 2022 - Google Patents
Assignees: Abhishek A. Sharma, Hillsboro, OR (US); Albert B. Chen, Portland, OR (US);
Wilfred Gomes, Portland, OR (US); Fatih Hamzaoglu, Portland, OR (US); Travis W. Lajoie …