The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching
method used in fabrication technology of various semiconductor devices. The etching is …

Silicon carbide (SiC) is one of the most promising materials for applications in harsh
environments thanks to its excellent electrical, mechanical, and chemical properties. The …

There is renewed emphasis on development of robust solid-state sensors capable of
uncooled operation in harsh environments. The sensors should be capable of detecting …

Advances in siliconcarbide microfabrication and growth process optimization for
siliconcarbide nanostructures are ushering in new opportunities for microdevices capable of …

US8071482B2 - Manufacturing method of a silicon carbide semiconductor device - Google
Patents US8071482B2 - Manufacturing method of a silicon carbide semiconductor device …

Silicon carbide (SiC) is a wide bandgap third‐generation semiconductor well suited for
harsh environment power electronics, micro and nano electromechanical systems, and …

Optical microstructures are increasingly applied in several fields, such as optical systems,
precision measurement, and microfluid chips. Microstructures include microgrooves …

Thoroughly revised and updated, the new edition of the best-selling MEMS Handbook is
now presented as a three-volume set that offers state-of-the-art coverage of …

SiC, as one typical 3rd generation semiconductor, has high potential to be used as the
substrate for harsh environment sensors. However, the etching of this material is still …

Micromachining silicon carbide (SiC) is challenging due to its durable nature. However,
plasma and laser etch processes have been utilized to realize deep and high aspect ratio …