N-type doping of SiC-passivated Ge by pulsed laser melting towards the development of interdigitated back contact thermophotovoltaic devices
In this article, a method for phosphorous (n-type) doping of germanium based on spin-on
dopant sources and Pulsed Laser Melting (PLM) throughout an amorphous silicon carbide …
dopant sources and Pulsed Laser Melting (PLM) throughout an amorphous silicon carbide …
Simulation of the extra-terrestrial and terrestrial performance of GaAs/Ge dual-junction solar cells
T Sumaryada, A Sofyan, H Syafutra - Kuwait Journal of Science, 2019 - journalskuwait.org
Abstract The performance of GaAs/Ge dual-junction solar cells in the extra-terrestrial and
terrestrial condition are studied by means of the full simulation approach. Simulations …
terrestrial condition are studied by means of the full simulation approach. Simulations …