Circuit analysis and optimization of GAA nanowire FET towards low power and high switching

VB Sreenivasulu, V Narendar - Silicon, 2022 - Springer
The main aim of this work is to study the effect of symmetric and asymmetric spacer length
variations towards source and drain on n-channel SOI JL vertically stacked (VS) nanowire …

Comparative analysis of gate-oxide engineering in charge plasma based nanowire transistor

J Debnath, MEH Sikder, S Singha - Engineering Research …, 2023 - iopscience.iop.org
In this work, a hetero-gate-oxide charge plasma-based nanowire transistor (HGO-CPNWT)
has been proposed, characterized, and a comparative analysis with the conventional charge …

⁴He Optically Pumped Magnetometer With RF Field Modulation and Light Stabilization in Deep Well for Earthquake Monitoring

J Zhang, Y Wang, C Wang, Z Zhou… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Earthquake monitoring requires advanced instruments, such as a high-accuracy deep well
magnetometer. However, many challenges are encountered in harsh environments, such as …

[PDF][PDF] PREDICTIVE ANALYTICS OF JUNCTIONLESS DOUBLE GATE STRAINED MOSFET USING GENETIC ALGORITHM WITH DOE-BASED GREY RELATIONAL …

KE KAHARUDIN, F SALEHUDDIN… - Journal of Engineering …, 2023 - academia.edu
This paper explores the application of Genetic Algorithm (GA) incorporated with design of
experiment (DoE) based on Grey Relational Analysis (GRA) in predicting the optimal design …