A strained-modified, single-band, constant-potential three-dimensional model is formulated
to study the dependence of electronic states of InAs∕ GaAs quantum dots (QDs) on shape …

In this work, the effect of size and wetting layer on subband electronic envelop functions,
eigenenergies, linear and nonlinear absorption coefficients and refractive indices of a dome …

In the present work, we have studied the effect of impurity position on energy levels, the
donor binding energy and third harmonic generation of a pyramid and a cone like quantum …

The binding energy and diamagnetic susceptibility of an on-center hydrogenic donor
impurity in an InAs spherical quantum dot placed at the center of a GaAs cylindrical nano …

A mathematical model of the physical processes in nanostructures, considering that the
motion of the micro-particles takes place on continuous but non-differentiable curves, ie, on …

First principles molecular dynamics simulations are used to determine the relative stability of
wurtzite, graphitic, and rocksalt phases of the CdS nanostructure at various temperatures …

In the present work, we have studied electronic and optical properties of a lens-shaped
quantum dot under an external magnetic field. For this goal, we have calculated the energy …

The effects of wetting layer thickness and quantum dot (QD) shape on S-state, P-state, and
quasi-continuum energy levels of three dimensional strained pyramid-shaped QDs were …

The authors report on the impact of wetting layer thickness and quantum dot size on the
electronic and optical properties of dome-shaped InAs/GaAs quantum dots (QDs) with …

Electromechanical effects are important in semiconductor nanostructures as most of the
semiconductors are piezoelectric in nature. These nanostructures find applications in …