The effect of Auger electron–hole asymmetry on the efficiency droop in indium gallium
nitride quantum well (InGaN-QW) light-emitting diodes (LEDs) is investigated through a new …

In this work, we present a detailed analysis of the interplay of Coulomb effects and different
mechanisms that can lead to carrier-localization effects in c-plane (In, Ga) N/Ga N quantum …

A semi-empirical model of carrier recombination accounting for hole localization by
composition fluctuations in InGaN alloys is extended to polar and nonpolar quantum-well …

Abstract Understanding Auger recombination in (In, Ga) N-based quantum wells is of central
importance to unravelling the experimentally observed efficiency'droop'in modern (In, Ga) N …

We show that the coexistence of strong internal polarization and large carrier (ie, electron
and hole) effective mass accounts for~ 51% of the efficiency droop under high current …

Carrier localization due to statistical fluctuations in indium gallium nitride alloys has been
recognized to play an important role for the performance of light-emitting diodes, both …

We demonstrated two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with
distributed Bragg reflector (DBR) and without DBR to investigate the effect of dielectric …

The variation of the internal quantum efficiency (IQE) of single InGaN quantum well
structures emitting from blue to red is studied as a function of the excitation power density …

A novel III-Nitride digital alloy (DA) with ultra-broadband optical gain is proposed. Numerical
analysis shows a 50-period InN/GaN DA yields minibands that are densely quantized by …

This paper is devoted to studying the internal quantum efficiency (IQE) of blue and green
LEDs based on InGaN/GaN heterostructures in dependence on the following parameters …