GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
High-temperature modeling of algan/gan hemts
S Vitanov, V Palankovski, S Maroldt, R Quay - Solid-State Electronics, 2010 - Elsevier
Wide bandgap, high saturation velocity, and high thermal stability are some of the properties
of GaN, which make it an excellent material for high-power, high-frequency, and high …
of GaN, which make it an excellent material for high-power, high-frequency, and high …
[HTML][HTML] Effect of self-heating on electrical characteristics of AlGaN/GaN HEMT on Si (111) substrate
In order to study the effect of self-heating of AlGaN/GaN high electron mobility transistors
(HEMTs) characteristics fabricated on Si (111) substrate, simulations of 2DEG temperature …
(HEMTs) characteristics fabricated on Si (111) substrate, simulations of 2DEG temperature …
High-Temperature Performance of AlGaN/GaN MOSHEMT With Gate Insulator Fabricated on Si (111) Substrate
F Husna, M Lachab, M Sultana… - … on Electron Devices, 2012 - ieeexplore.ieee.org
The dc operation of high-quality AlGaN/GaN metal–oxide–semiconductor high-electron-
mobility transistors (MOSHEMTs) on Si (111) substrates, fabricated using SiO_2 as the gate …
mobility transistors (MOSHEMTs) on Si (111) substrates, fabricated using SiO_2 as the gate …
Extreme temperature modeling of ALGAN/GAN HEMTS
SA Albahrani, D Mahajan, S Kargarrazi… - … on Electron Devices, 2020 - ieeexplore.ieee.org
The industry standard advanced SPICE model (ASM)-GaN compact model has been
enhanced to model the GaN high electron mobility transistors (HEMTs) at extreme …
enhanced to model the GaN high electron mobility transistors (HEMTs) at extreme …
Charge Trapping in GaN Power Transistors: Challenges and Perspectives
M Meneghini, N Modolo, A Nardo… - 2021 IEEE BiCMOS …, 2021 - ieeexplore.ieee.org
Over the past decade, gallium nitride has emerged as an excellent semiconductor for the
fabrication of power devices, to be used in energy conversion systems and switching-mode …
fabrication of power devices, to be used in energy conversion systems and switching-mode …
Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 K
In this article, we report the temperature-dependent transistor characteristic of Epi-Gd 2 O
3/AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) and …
3/AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) and …
Electronic structure, optical properties, and thermoelectric properties of Mg-doped GaN materials
B Huang, H Liao, C Song, W Chen, N Yang… - Solid State …, 2024 - Elsevier
This work was based on first principles calculations and investigated the electronic structure,
optical properties, and thermoelectric properties of Mg doped GaN bulk materials. It …
optical properties, and thermoelectric properties of Mg doped GaN bulk materials. It …
An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications
This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at
elevated temperatures. Modifications to the standard ASM-HEMT were developed to …
elevated temperatures. Modifications to the standard ASM-HEMT were developed to …
New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors
This paper presents a novel approach to the efficient extraction of parasitic resistances in
high electron mobility transistors (HEMTs). The study reveals that the gate resistance value …
high electron mobility transistors (HEMTs). The study reveals that the gate resistance value …