The growth and properties of electronic oxide thin films are reviewed. In particular, the
synthesis and properties of superconducting, insulating, conducting, magnetic, and …

Currently, III–V metal–insulator–semiconductor field effect transistors (MISFETs) are
considered to be promising device candidates for the so-called “More Moore Approach” to …

Compared to silicon substrates, III–V materials based on GaAs and/or InP are generally
limited to small diameters, up to 150 mm for GaAs and 100 mm for InP, even though bulk …

This paper reviews recent efforts by authors' group to utilize electrochemical processes for
formation, processing and gate control of III–V semiconductor nanostructures. Topics include …

Hydrogen and/or helium implantation-induced surface blistering and layer splitting in
compound semiconductors such as InP, GaAs, GaN, AlN, and ZnO are discussed. The …

Planar lightwave circuits based on III-nitride wide-bandgap semiconductors are proposed
and the feasibility of developing III-nitride-based novel photonic integrated circuits for …

We present a systematic study of the morphology of homoepitaxial InP films grown by
metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy …

Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic
deposition of Pt nanoparticles are investigated at different temperatures by the measurement …

Inductively coupled plasma (ICP) operated in the reactive-ion etching mode is used for mesa
etching of InP using Cl 2/N 2 chemistry with a Ni metal mask. Etch rates of approximately …

We report on the photoluminescence (PL) properties of InAs/InAlAs/InP quantum wires
(QWRs) with various InAs deposited thickness. The PL linewidth of the QWRs decreases …