Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted
tremendous interest motivated by the extraordinary properties it shows across the fields of …

To maintain the scaling trends in the complementary metal oxide semiconductor (CMOS)
technology, the thickness of barrier/liner systems used in back-end-of-line (BEOL) …

This study utilizes DFT calculations to assess the effectiveness of Ti-TM (TM= W, Ru) alloys
in obstructing copper diffusion, a pivotal factor for semiconductor device reliability. The …

This study focuses on amorphous boron nitride ($\rm\alpha $-BN) as a novel diffusion
barrier for advanced semiconductor technology, particularly addressing the critical …

This study focuses on amorphous boron nitride (α-BN) as a novel diffusion barrier for
advanced semiconductor technology, particularly addressing the critical challenge of copper …