Indium tin oxide films have been deposited by RF magnetron sputtering technique.
Discharge power density has been varied from 0.36 to 2 W cm− 2 and pure argon or …

Amorphous oxide semiconductors are attracting much attention due to their high electron
mobility even when processed at low temperatures. One such material is indium gallium zinc …

Titanium dioxide films were prepared by ultrasonic spray pyrolysis on (0001) α-quartz
substrates at 400° C and/or annealed in air at 600°, 800°, or 1000° C. The as-deposited …

This study probes the effect of annealing temperature on electrical, optical and
microstructural properties of indium tin oxide (ITO) films deposited onto soda lime glass …

The deposition of transparent conductive oxides (TCO) usually employs harsh conditions
that are frequently harmful to soft/organic underlayers. Herein, successful use of an …

Semitransparent perovskite solar cells (ST-PSCs) are increasingly important in a range of
applications, including top cells in tandem devices and see-through photovoltaics …

A systematic study of the growth of indium tin oxide (ITO) thin films on polyethylene
terephthalate substrate was carried out using RF reactive magnetron sputtering. The effect of …

For this study we focused on the front contact barrier height of HIT (ITO/a-Si: H (p)/a-Si: H
(i)/c-Si (n)) solar cell. The ITO films with low resistivity of 1.425× 10− 4Ωcm were deposited …

Indium tin oxide (ITO) films of low resistivity, high transmittance and good figure of merit were
prepared by radio frequency magnetron sputtering, at different substrate temperatures (Ts) …

Indium tin oxide (ITO) thin films were deposited on polymeric substrates at room temperature
by dc reactive magnetron sputtering from an In–Sn (90–10 wt%) alloy target. The electrical …