A nitrogen-related electron trap (E1), located approximately 0.33 eV from the conduction
band minimum of GaAsN grown by chemical beam epitaxy, was confirmed by investigating …

The origin of a N-related recombination center (E1), at around 0.33 eV below the conduction
band minimum (CBM) of chemical beam epitaxy (CBE) grown GaAsN, is discussed based …

The temperature dependence of capacitance–voltage (C–V) and current voltage (I–V)
characteristics were used to study the cause of high background doping and the underlying …

Deep level transient spectroscopy (DLTS) was deployed to study the evolution, upon
electron irradiation and hydrogenation of GaAsN grown by chemical beam epitaxy, of the …

We use two-wavelength-excited photoluminescence (PL) to investigate nonradiative
recombination (NRR) centers in GaAs: N δ-doped superlattice (SL) structures grown by …

Current transport mechanisms were investigated in a GaAsN homojunction solar cell (HJSC)
grown by chemical beam epitaxy. At each temperature of measurement, the current-voltage …

Nonradiative recombination (NRR) centers in GaAs: N δ-doped superlattice (SL) structure
grown by metal organic vapor phase epitaxy (MOVPE) are studied by two-wavelength …

In this study, we examined the E− band luminescence of a GaAs: N δ-doped superlattice
(SL) grown by metal organic vapor phase epitaxy with 0.15% nitrogen (N) using two …

Isochronal and isothermal annealing treatments were carried out on GaAsN films grown by
chemical beam epitaxy to clarify the evolution of a nonradiative recombination center, at an …

The N–H related acceptor defects in GaAsN grown by chemical beam epitaxy (CBE) are
studied by hydrogen isotopes, H and D. When the films are grown by a conventional arsenic …