Integrated germanium optical interconnects on silicon substrates
P Chaisakul, D Marris-Morini, J Frigerio, D Chrastina… - Nature …, 2014 - nature.com
Monolithic integration of optoelectronics with electronics is a much-desired functionality.
Here, we demonstrate that it is possible to realize low-loss Ge quantum-well photonic …
Here, we demonstrate that it is possible to realize low-loss Ge quantum-well photonic …
Recent progress on Ge/SiGe quantum well optical modulators, detectors, and emitters for optical interconnects
Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for
the realization of Si-based optical modulators, photodetectors, and light emitters for short …
the realization of Si-based optical modulators, photodetectors, and light emitters for short …
[HTML][HTML] Recent progress in GeSi electro-absorption modulators
P Chaisakul, D Marris-Morini, MS Rouifed… - … and technology of …, 2014 - Taylor & Francis
Electro-absorption from GeSi heterostructures is receiving growing attention as a high
performance optical modulator for short distance optical interconnects. Ge incorporation with …
performance optical modulator for short distance optical interconnects. Ge incorporation with …
Reactivity dynamics
U Sarkar, PK Chattaraj - The Journal of Physical Chemistry A, 2021 - ACS Publications
The chemical reactivity of a molecule as a whole or of an atom in a molecule varies during a
chemical reaction. A variation of global and local reactivity descriptors in the course of a …
chemical reaction. A variation of global and local reactivity descriptors in the course of a …
Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon
We demonstrate electroabsorption contrast greater than 5 dB over the entire
telecommunication S-and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy …
telecommunication S-and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy …
Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3 μm
MS Rouifed, D Marris-Morini… - IEEE Journal of …, 2013 - ieeexplore.ieee.org
The paper reports on the developments of Ge/SiGe quantum well (QW) waveguide
modulators operating at 1.3 μm. Two modulator configurations have been studied: The first …
modulators operating at 1.3 μm. Two modulator configurations have been studied: The first …
Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon
We report modulation of the absorption coefficient at 1.3? μm in Ge/SiGe multiple quantum
well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering …
well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering …
Extended density-matrix model applied to silicon-based terahertz quantum cascade lasers
Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over
existing III-V devices. Although coherent electron transport effects are known to be important …
existing III-V devices. Although coherent electron transport effects are known to be important …
Resolving buried optoelectronic features in metal halide perovskites via modulation spectroscopy studies
E Amerling, KR Hansen… - Journal of Materials …, 2021 - pubs.rsc.org
As research on both bulk and low dimensional metal halide perovskites (MHPs) continues to
grow, the tools necessary to gain insights into their exotic and highly convoluted …
grow, the tools necessary to gain insights into their exotic and highly convoluted …
Modeling of second harmonic generation in hole-doped silicon-germanium quantum wells for mid-infrared sensing
The development of Ge and SiGe chemical vapor deposition techniques on silicon wafers
has enabled the integration of multi-quantum well structures in silicon photonics chips for …
has enabled the integration of multi-quantum well structures in silicon photonics chips for …