Amorphous oxide semiconductor transistors have been a mature technology in display
panels for upward of a decade, and have recently been considered as promising back‐end …

The accelerated evolution of artificial intelligence (AI) and semiconductor technologies has
fostered a mutually reinforcing relationship, whereby each technology has contributed to the …

In this work, we report on back-end-of-line (BEOL)-compatible InGaZnO indium gallium zinc
oxide (IGZO) thin film transistors (TFTs) with extreme scaled device dimension including …

In this work, the transient thermal and electrical characteristics of top-gated (TG), ultrathin,
atomic-layer-deposited (ALD), back-end-of-line (BEOL) compatible indium oxide (In2O3) …

Ultrathin indium oxide films show great potential as channel materials of complementary
metal oxide semiconductor back-end-of-line transistors due to their high carrier mobility …

Amorphous oxide semiconductors (AOS) are pivotal for next‐generation electronics due to
their high electron mobility and excellent optical properties. However, In2O3, a key material …

This work unveils critical insights through spectroscopic analysis highlighting electrical
phenomena and oxygen vacancy generation in self-aligned fully solution-processed oxide …

Deposition of indium oxide base films for high‐mobility thin film transistors (TFTs) has been
an important part in the implementation of high‐resolution and high‐frequency display back …

Metal oxides, once a scientific curiosity, 1 have evolved into a transformative technology for
modern electronics. 2 Their applications span energy, lighting, information displays …

We propose a new fluorine doping scheme to achieve a notable improvement in IZTO thin-
film-transistor reliability using the fluorine-doped IZTO channel with the stacked IZTO: F/IZTO …