Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor
D Jarosz, M Stachowicz, P Krzeminski, M Ruszala… - ACS …, 2023 - ACS Publications
The molecular beam epitaxy (MBE) technique is renowned as the most suitable for the
growth of high-quality crystalline materials and nanostructures such as GaAs. However …
growth of high-quality crystalline materials and nanostructures such as GaAs. However …
Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature
S Iba, R Okamoto, K Obu, Y Obata, Y Ohno - Micromachines, 2021 - mdpi.com
We have systematically investigated the structural properties, carrier lifetimes, namely,
photoluminescence (PL) lifetimes (τ PL), and electron spin relaxation times (τ s) in (110) …
photoluminescence (PL) lifetimes (τ PL), and electron spin relaxation times (τ s) in (110) …
[PDF][PDF] COMBINED ROASTING AND LEACHING TREATMENT FOR REDUCING PHOSPHORUS, ALUMINUM AND SILICON IN OOLITIC IRON ORE.
I Ammour, N Sabba, I Zeriri, A Bouslama… - Scientific Bulletin of …, 2024 - nvngu.in.ua
Purpose. To enhance the quality of oolitic iron ore extracted from the Gara Djebillet mine in
southern Algeria by reducing the levels of silicon, aluminum, and phosphorus, thus making it …
southern Algeria by reducing the levels of silicon, aluminum, and phosphorus, thus making it …
Growth of Epitaxial Chalcopyrite Thin Films on Mis-Orientated Gaas Substrates
LC Yang, A Rockett - Available at SSRN 4231428 - papers.ssrn.com
We investigated the influence of mis-orientated GaAs (111) B substrates on the growth of
epitaxial I-III-VI2 CuInSe2 chalcopyrite thin films. A GaAs (111) B substrate, with rounded …
epitaxial I-III-VI2 CuInSe2 chalcopyrite thin films. A GaAs (111) B substrate, with rounded …
Науковий вісник НГУ
I Ammour, N Sabba, I Zeriri, A Bouslama, E Sakher - nvngu.in.ua
Purpose. To enhance the quality of oolitic iron ore extracted from the Gara Djebillet mine in
southern Algeria by reducing the levels of silicon, aluminum, and phosphorus, thus making it …
southern Algeria by reducing the levels of silicon, aluminum, and phosphorus, thus making it …
Науковий вісник НГУ
ЮІ Клюс - nvngu.in.ua
Мета. Розробка інтеграційного управління інноваціями на основі створення
корпоративної інноваційної бази на промислових підприємствах в умовах …
корпоративної інноваційної бази на промислових підприємствах в умовах …