Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-
SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular …
SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular …
[HTML][HTML] Silicon carbide: A unique platform for metal-oxide-semiconductor physics
A sustainable energy future requires power electronics that can enable significantly higher
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …
Selective doping in silicon carbide power devices
Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …
Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
This paper reviews advanced gate dielectric processes for SiC MOSFETs. The poor quality
of the SiO 2/SiC interface severely limits the value of the channel field-effect mobility …
of the SiO 2/SiC interface severely limits the value of the channel field-effect mobility …
Gate and base drivers for silicon carbide power transistors: An overview
D Peftitsis, J Rabkowski - IEEE Transactions on Power …, 2015 - ieeexplore.ieee.org
Silicon carbide (SiC) power transistors have started gaining significant importance in various
application areas of power electronics. During the last decade, SiC power transistors were …
application areas of power electronics. During the last decade, SiC power transistors were …
Ion implantation doping in silicon carbide and gallium nitride electronic devices
Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …
excellent materials for the next generation of high-power and high-frequency electronic …
Improved channel mobility in 4H-SiC MOSFETs by boron passivation
D Okamoto, M Sometani, S Harada… - IEEE Electron …, 2014 - ieeexplore.ieee.org
We propose another process for fabricating 4H-SiC metal-oxide-semiconductor field-effect
transistors (MOSFETs) with high channel mobility. The B atoms were introduced into a SiO …
transistors (MOSFETs) with high channel mobility. The B atoms were introduced into a SiO …
SiC trench MOSFET with reduced switching loss and increased short-circuit capability
T Yang, Y Wang, R Yue - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
In this article, a novel SiC trench MOSFET with deep p+ shielded regions and current
spreading layers (CSLs)(DPCSL-MOS) is proposed and studied by TCAD simulations. The …
spreading layers (CSLs)(DPCSL-MOS) is proposed and studied by TCAD simulations. The …
A Critical review on reliability and short circuit robustness of silicon carbide power MOSFETs
Superior electrical and physical properties of SiC (Silicon Carbide) make them ideal for
various high voltage, high frequency and high power electronic applications. When …
various high voltage, high frequency and high power electronic applications. When …