[HTML][HTML] Efficient machine learning-assisted failure analysis method for circuit-level defect prediction
J Ghosh - Machine Learning with Applications, 2024 - Elsevier
Integral to the success of transistor advancements is the accurate use of failure analysis (FA)
which benefits in fine-tuning and optimization of the fabrication processes. However, the …
which benefits in fine-tuning and optimization of the fabrication processes. However, the …
Spacer Design Strategies at sub-5 nm technology node for Junctionless Forksheet FET: Bridging Device Optimization and Circuit Efficacy-A Dielectric Perspective
D Gurre, V Dasari, K Mulaga, S Valasa… - … on Dielectrics and …, 2024 - ieeexplore.ieee.org
For the first time, we report on the spacer design guidelines for the Junctionless Forksheet
FET (JL-FSFET) at the sub-5nm technology node. Recently, this device has emerged as the …
FET (JL-FSFET) at the sub-5nm technology node. Recently, this device has emerged as the …
First Simulation of the Effects of Metal Sidewall Source/Drain and Channel Number on the Output Characteristics of Current Mirror Formed by Vertically Stacked GAA …
KJ Chou, Y Li - 2024 International Conference on Simulation of …, 2024 - ieeexplore.ieee.org
In this work, we study the effect of metal sidewall (MSW) sourceldrain (SID) on the circuit
performance of current mirror (CM) formed by vertically stacked gate-all-around (GAA) …
performance of current mirror (CM) formed by vertically stacked gate-all-around (GAA) …