Van der Waals epitaxy of iii‐nitride semiconductors based on 2D materials for flexible applications
III‐nitride semiconductors have attracted considerable attention in recent years owing to
their excellent physical properties and wide applications in solid‐state lighting, flat‐panel …
their excellent physical properties and wide applications in solid‐state lighting, flat‐panel …
Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …
been extensively investigated as potential replacements for current polar c-plane LEDs …
Temperature-dependent photoluminescence in light-emitting diodes
T Lu, Z Ma, C Du, Y Fang, H Wu, Y Jiang, L Wang… - Scientific reports, 2014 - nature.com
Abstract Temperature-dependent photoluminescence (TDPL), one of the most effective and
powerful optical characterisation methods, is widely used to investigate carrier transport and …
powerful optical characterisation methods, is widely used to investigate carrier transport and …
GaN in different dimensionalities: Properties, synthesis, and applications
Y Chen, J Liu, K Liu, J Si, Y Ding, L Li, T Lv… - Materials Science and …, 2019 - Elsevier
Wurtzite GaN materials underpin many aspects of optoelectronic applications due to the
special tetrahedral-coordinated structure. Compared with three dimensional (3D) GaN, low …
special tetrahedral-coordinated structure. Compared with three dimensional (3D) GaN, low …
Universal and scalable route to fabricate GaN nanowire-based LED on amorphous substrate by MOCVD
GaN-based light-emitting diodes (LEDs) on sapphire are known to exhibit high efficiency
and long lifetime. Currently, Si substrate has been explored for the replacement of sapphire …
and long lifetime. Currently, Si substrate has been explored for the replacement of sapphire …
Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications
IM Watson - Coordination Chemistry Reviews, 2013 - Elsevier
This article reviews metal organic vapour phase epitaxy (MOVPE) processes developed for
the group 13 nitrides AlN, GaN, InN and their alloys. The binaries are direct-gap …
the group 13 nitrides AlN, GaN, InN and their alloys. The binaries are direct-gap …
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
Highly ordered, position-controlled gallium nitride (GaN) nanowire based multiple-quantum-
wells (MQWs) core–shell architecture arrays are synthesized by metalorganic chemical …
wells (MQWs) core–shell architecture arrays are synthesized by metalorganic chemical …
Super-gain nanostructure with self-assembled well-wire complex energy-band engineering for high performance of tunable laser diodes
Y Wang, H Tai, R Duan, M Zheng, W Lu, Y Shi… - …, 2023 - degruyter.com
Although traditional quantum-confined nanostructures eg regular quantum wells or quantum
dots have achieved huge success in the field of semiconductor lasers for past decades …
dots have achieved huge success in the field of semiconductor lasers for past decades …
Emission characteristics of InGaN/GaN core-shell nanorods embedded in a 3D light-emitting diode
We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN
multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) …
multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) …
Multi-color broadband visible light source via GaN hexagonal annular structure
Multi-color and broadband visible emission was realized thorough the hexagonal annular
structure of GaN. The annular structure fabricated by selective-area growth emitted purple …
structure of GaN. The annular structure fabricated by selective-area growth emitted purple …