Wide band gap ferromagnetic semiconductors and oxides

SJ Pearton, CR Abernathy, ME Overberg… - Journal of Applied …, 2003 - pubs.aip.org
Recent advances in the theory and experimental realization of ferromagnetic
semiconductors give hope that a new generation of microelectronic devices based on the …

[HTML][HTML] Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

M Tanaka, S Ohya, P Nam Hai - Applied Physics Reviews, 2014 - pubs.aip.org
Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin
degrees of freedom as well as charge transport in materials and devices. While metal-based …

Recent progress in ferromagnetic semiconductors and spintronics devices

M Tanaka - Japanese Journal of Applied Physics, 2020 - iopscience.iop.org
By actively using not only charge transport of electrons and holes but also their spins, we
can create a variety of new phenomena and functional materials. It is highly expected that …

Spintronics and spintronics materials

VA Ivanov, TG Aminov, VM Novotortsev… - Russian Chemical …, 2004 - Springer
The review concerns the fundamentals of spintronics (spin-transport electronics). The
material covers spin-spin interactions and spin relaxation in semiconductors as well as spin …

Theory of spin-polarized bipolar transport in magnetic junctions

J Fabian, I Žutić, SD Sarma - Physical Review B, 2002 - APS
The interplay between spin and charge transport in electrically and magnetically
inhomogeneous semiconductor systems is investigated theoretically. In particular, the theory …

Towards a better understanding of the anomalous Hall effect

D Yue, X Jin - Journal of the Physical Society of Japan, 2017 - journals.jps.jp
Recent experimental efforts to identify the intrinsic and extrinsic contributions in the
anomalous Hall effect are reviewed. Benefited from the experimental control of artificial …

Intrinsic hole localization mechanism in magnetic semiconductors

H Raebiger, A Ayuela… - Journal of Physics …, 2004 - iopscience.iop.org
The interplay between clustering and exchange coupling in magnetic semiconductors for the
prototype (Ga 1− x, Mn x) As is investigated considering manganese concentrations x of …

Site-specific atomic order and band structure tailoring in the diluted magnetic semiconductor (In, Ga, Mn) As

K Medjanik, O Fedchenko, O Yastrubchak, J Sadowski… - Physical Review B, 2021 - APS
Diluted ferromagnetic semiconductors combining ferromagnetic and semiconducting
properties in one material provide numerous new functionalities, attractive for basic studies …

Spintronics: recent progress and tomorrow's challenges

M Tanaka - Journal of Crystal Growth, 2005 - Elsevier
This article reviews the recent advances of epitaxial ferromagnetic thin films and
heterostructures as well as devices towards semiconductor-based spin-electronics or often …

chapter 1 III-V ferromagnetic semiconductors

F Matsukura, H Ohno, T Dietl - Handbook of magnetic materials, 2002 - Elsevier
Publisher Summary Modem information technology utilizes the charge degree of freedom of
electrons in semiconductors to process the information and the spin degree of freedom in …