A review is given of theoretical concepts and experimental results on spontaneous formation
of periodically ordered nanometer-scale structures on crystal surfaces. Thermodynamic …

In semiconductor heteroepitaxy the growing film frequently undergoes a series of strain relief
mechanisms that may include surface reconstruction, step bunching, faceting, and finally …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

Two main assumptions which underlie the Stoney formula relating substrate curvature to
mismatch strain in a bonded thin film are that the film is very thin compared to the substrate …

Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

The general trend in modern solid state physics and technology is to make things smaller.
The size of key elements in modern devices approaches the nanometer scale, for both …

When growing a crystal, a planar front is desired for most of the applications. This plane
shape is often destroyed by instabilities of various types. In the case of growth from a …

The physical system considered is a thin film bonded to the surface of an initially flat circular
substrate, in the case when a residual stress exists due to an incompatible mismatch strain …

In recent years, quantum dots have been successfully grown by self-assembling processes.
For optoelectronic device applications, the quantum-dot structures have advantages such as …

Strain fields in stacked layers of vertically aligned self-assembled Ge islands on Si (100) can
cause a reduction of the wetting layer thickness in all but the initial layer and hence induce …