Temperature measurement of power semiconductor devices by thermo-sensitive electrical parameters—A review
This paper proposes a synthesis of different electrical methods used to estimate the
temperature of power semiconductor devices. The following measurement methods are …
temperature of power semiconductor devices. The following measurement methods are …
Temperature measurements of semiconductor devices-a review
DL Blackburn - … and Management Symposium (IEEE Cat. No …, 2004 - ieeexplore.ieee.org
There are numerous methods for measuring the temperature of an operating semiconductor
device. The methods can be broadly placed into three generic categories: electrical, optical …
device. The methods can be broadly placed into three generic categories: electrical, optical …
Comparison of junction temperature evaluations in a power IGBT module using an IR camera and three thermosensitive electrical parameters
The measurement of the junction temperature with thermosensitive electrical parameters
(TSEPs) is largely used by electrical engineers or researchers, but the obtained temperature …
(TSEPs) is largely used by electrical engineers or researchers, but the obtained temperature …
[图书][B] Insulated gate bipolar transistor IGBT theory and design
VK Khanna - 2004 - books.google.com
Page 1 THE INSULATED GATE BIPOLAR TRANSISTOR IGBT THEORY AND DESIGN Vinod
Kumar Khanna IEEE IEEE PRESS WILEYINTERSCIENCE A JOHN WILEY & SONS, INC …
Kumar Khanna IEEE IEEE PRESS WILEYINTERSCIENCE A JOHN WILEY & SONS, INC …
A review of IGBT models
K Sheng, BW Williams, SJ Finney - IEEE transactions on Power …, 2000 - ieeexplore.ieee.org
In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are
reviewed, analyzed, compared and classified into different categories according to …
reviewed, analyzed, compared and classified into different categories according to …
Investigation into IGBT dV/dt during turn-off and its temperature dependence
In many power converter applications, particularly those with high variable loads, such as
traction and wind power, condition monitoring of the power semiconductor devices in the …
traction and wind power, condition monitoring of the power semiconductor devices in the …
Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions
A Tsibizov, I Kovačević-Badstübner… - … on Power Electronics, 2019 - ieeexplore.ieee.org
Electrothermal modeling of silicon carbide (SiC) power devices is frequently performed to
estimate the device temperature in operation, typically assuming a constant thermal …
estimate the device temperature in operation, typically assuming a constant thermal …
Ensuring a reliable operation of two-level IGBT-based power converters: A review of monitoring and fault-tolerant approaches
Despite the emerging multi-phase and multi-level converters, two-level insulated gate
bipolar transistor-based power converters are still widely used in industrial applications in …
bipolar transistor-based power converters are still widely used in industrial applications in …
A real-time thermal model for monitoring of power semiconductor devices
TK Gachovska, B Tian, JL Hudgins… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
A resistance-capacitance (RC) thermal network with temperature-dependent thermal
conductivities and heat capacitances is used to calculate the junction temperature of …
conductivities and heat capacitances is used to calculate the junction temperature of …
Choosing a thermal model for electrothermal simulation of power semiconductor devices
A Ammous, S Ghedira, B Allard… - IEEE transactions on …, 1999 - ieeexplore.ieee.org
The literature proposes some thermal models needed for the electrothermal simulation of
power electronic systems. This paper gives a useful analysis about the choice of the thermal …
power electronic systems. This paper gives a useful analysis about the choice of the thermal …