Finite basis set corrections to total energy pseudopotential calculations

GP Francis, MC Payne - Journal of Physics: Condensed Matter, 1990 - iopscience.iop.org
A means of correcting total energy pseudopotential calculations performed using a fixed cut-
off energy for the plane waves in the basis set is presented. The use of a finite set of special …

Structural and electronic properties of cubic, 2H, 4H, and 6H SiC

CH Park, BH Cheong, KH Lee, KJ Chang - Physical Review B, 1994 - APS
We study the structural and electronic properties of various polytypes of SiC through self-
consistent ab initio pseudopotential calculations. For the wurtzite (2H), 4H, and 6H …

Ab initio calculation of structural and lattice-dynamical properties of silicon carbide

K Karch, P Pavone, W Windl, O Schütt, D Strauch - Physical Review B, 1994 - APS
The plane-wave pseudopotential approach to density-functional theory (DFT) in the local-
density approximation has been applied to investigate a variety of ground-state properties of …

Ab initio pseudopotential study of structural and high-pressure properties of SiC

KJ Chang, ML Cohen - Physical Review B, 1987 - APS
An ab initio pseudopotential method is used to study the structural properties of SiC at low
and high pressures. For cubic SiC, the calculated ground-state properties, such as the …

Electronic properties of cubic and hexagonal SiC polytypes from ab initio calculations

P Käckell, B Wenzien, F Bechstedt - Physical Review B, 1994 - APS
Ab initio total-energy studies are used to determine the lattice constants and the atomic
positions within the unit cells for 3C-, 6H-, 4H-, and 2H-SiC. The electronic structures are …

Influence of atomic relaxations on the structural properties of SiC polytypes from ab initio calculations

P Käckell, B Wenzien, F Bechstedt - Physical Review B, 1994 - APS
A systematic study of ground-state properties of cubic and hexagonal silicon carbide
polytypes (3C-, 6H-, 4H-, and 2H-SiC) is reported using well converged density-functional …

Formation energies, abundances, and the electronic structure of native defects in cubic SiC

C Wang, J Bernholc, RF Davis - Physical Review B, 1988 - APS
The relative abundance of native point defects in cubic SiC has been studied via ab initio
calculations as a function of composition and the Fermi-level position. For Si-rich cubic SiC …

Lattice dynamics of SiC polytypes within the bond-charge model

M Hofmann, A Zywietz, K Karch, F Bechstedt - Physical Review B, 1994 - APS
We present a phemomenological approach to the lattice-dynamical properties of various SiC
polytypes. A generalized bond-charge model is applied to the cubic and hexagonal …

Global band structure and near‐band‐edge states

G Wellenhofer, U Rössler - physica status solidi (b), 1997 - Wiley Online Library
The global band structure from ab‐initio calculations using DFT‐LDA concepts is presented
and discussed for 2H, 3C, 4H, 6H, and 15R SiC in view of the different stacking sequences …

Exploring the electronic and mechanical properties of lithium-decorated silicon carbide nanowires for energy storage

M Gonzalez, F Salazar, A Trejo, Á Miranda… - Journal of Energy …, 2023 - Elsevier
The high chemical stability of silicon carbide (SiC) is attractive to inhibit unwanted side
chemical reaction and prolongate the cyclability performance of lithium ion batteries anodes …