Room temperature lasing in GeSn microdisks enabled by strain engineering
The success of GeSn alloys as active material for infrared lasers could pave the way toward
a monolithic technology that can be manufactured within mainstream silicon photonics …
a monolithic technology that can be manufactured within mainstream silicon photonics …
Record-high hole mobility germanium on flexible plastic with controlled interfacial reaction
T Imajo, T Ishiyama, N Saitoh… - ACS Applied …, 2021 - ACS Publications
A semiconductor thin film with high carrier mobility was fabricated on a flexible film. During
the solid-phase crystallization process of the densified amorphous Ge layer, the interfacial …
the solid-phase crystallization process of the densified amorphous Ge layer, the interfacial …
On-chip infrared photonics with Si-Ge-heterostructures: What is next?
The integration of Ge on Si for photonics applications has reached a high level of maturity:
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …
Diamond-germanium composite films grown by microwave plasma CVD
We report on novel microcrystalline diamond-germanium composite films grown by
microwave plasma-assisted chemical vapor deposition in CH 4–H 2-GeH 4 mixtures on Si …
microwave plasma-assisted chemical vapor deposition in CH 4–H 2-GeH 4 mixtures on Si …
Strain effects on polycrystalline germanium thin films
T Imajo, T Suemasu, K Toko - Scientific Reports, 2021 - nature.com
Polycrystalline Ge thin films have attracted increasing attention because their hole mobilities
exceed those of single-crystal Si wafers, while the process temperature is low. In this study …
exceed those of single-crystal Si wafers, while the process temperature is low. In this study …
n-Type polycrystalline germanium layers formed by impurity-doped solid-phase growth
K Nozawa, T Nishida, T Ishiyama… - ACS Applied …, 2023 - ACS Publications
The carrier mobility of polycrystalline Ge thin-film transistors has significantly improved in
recent years, raising hopes for the realization of next-generation electronic devices. Here …
recent years, raising hopes for the realization of next-generation electronic devices. Here …
Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading
O Skibitzki, MH Zoellner, F Rovaris, MA Schubert… - Physical Review …, 2020 - APS
The threading dislocation density (TDD) in plastically relaxed Ge/Si (001) heteroepitaxial
films is commonly observed to decrease progressively with their thickness due to mutual …
films is commonly observed to decrease progressively with their thickness due to mutual …
Thermoelectric efficiency of epitaxial GeSn alloys for integrated Si-based applications: assessing the lattice thermal conductivity by Raman thermometry
D Spirito, N von den Driesch… - ACS Applied Energy …, 2021 - ACS Publications
Energy harvesting for Internet of Things applications, comprising sensing, life sciences,
wearables, and communications, requires efficient thermoelectric (TE) materials, ideally …
wearables, and communications, requires efficient thermoelectric (TE) materials, ideally …
Acceptor defects in polycrystalline Ge layers evaluated using linear regression analysis
Polycrystalline Ge thin films have recently attracted renewed attention as a material for
various electronic and optical devices. However, the difficulty in the Fermi level control of …
various electronic and optical devices. However, the difficulty in the Fermi level control of …
Lattice deformation at submicron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices
The lattice strain induced by metallic electrodes can impair the functionality of advanced
quantum devices operating with electron or hole spins. Here, we investigate the deformation …
quantum devices operating with electron or hole spins. Here, we investigate the deformation …