3C-SiC-on-Si MOSFETs: overcoming material technology limitations
The cubic polytype (3C-) of silicon carbide (SiC) is an emerging semiconductor technology
for power devices. The featured isotropic material properties along with the wide band gap …
for power devices. The featured isotropic material properties along with the wide band gap …
On the 3C-SiC/SiO2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating …
N Lophitis, A Arvanitopoulos… - … IEEE Workshop on …, 2022 - ieeexplore.ieee.org
Cubic (3C-) silicon carbide (SiC) metal oxide semiconductor (MOS) devices have the
potential to achieve superior performance and reliability. The effective channel mobility can …
potential to achieve superior performance and reliability. The effective channel mobility can …