At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

Semiconductor Materials presents physico-chemical, electronic, electrical, elastic,
mechanical, magnetic, optical, and other properties of a vast group of elemental, binary, and …

Direct-detection experiments for light dark matter are making enormous leaps in reaching
previously unexplored model space. Several recent proposals rely on collective excitations …

Infrared photoluminescence (PL) from lnSb, InAs, and InAsl_xSbx (x< 0.3) epitaxial layers
grown by atmospheric pressure organometallic vapor phase epitaxy has been investigated …

A notable phenomenon in topological semimetals is the violation of Kohler's rule, which
dictates that the magnetoresistance MR obeys a scaling behavior of MR= f (H/ρ 0), where …

Picosecond carrier dynamics in indium antimonide (InSb) following excitation by below band
gap broadband far-infrared radiation was investigated at 200 and 80 K. Using a THz …

Stanene (single-layer gray tin), with an electronic structure akin to that of graphene but
exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature …

A pn junction maintained at above ambient temperature can work as a heat engine,
converting some of the supplied heat into electricity and rejecting entropy by interband …

The principal challenge for achieving reconfigurable optical antennas and metasurfaces is
the need to generate continuous and large tunability of subwavelength, low-Q resonators …

Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than 150
MW/cm^ 2 shows strong free-carrier absorption saturation at temperatures of 300 K and 200 …