Semiconductor Materials presents physico-chemical, electronic, electrical, elastic, mechanical, magnetic, optical, and other properties of a vast group of elemental, binary, and …
Direct-detection experiments for light dark matter are making enormous leaps in reaching previously unexplored model space. Several recent proposals rely on collective excitations …
ZM Fang, KY Ma, DH Jaw, RM Cohen… - Journal of Applied …, 1990 - pubs.aip.org
Infrared photoluminescence (PL) from lnSb, InAs, and InAsl_xSbx (x< 0.3) epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy has been investigated …
A notable phenomenon in topological semimetals is the violation of Kohler's rule, which dictates that the magnetoresistance MR obeys a scaling behavior of MR= f (H/ρ 0), where …
Picosecond carrier dynamics in indium antimonide (InSb) following excitation by below band gap broadband far-infrared radiation was investigated at 200 and 80 K. Using a THz …
CZ Xu, YH Chan, P Chen, X Wang, D Flötotto… - Physical Review B, 2018 - APS
Stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature …
A pn junction maintained at above ambient temperature can work as a heat engine, converting some of the supplied heat into electricity and rejecting entropy by interband …
The principal challenge for achieving reconfigurable optical antennas and metasurfaces is the need to generate continuous and large tunability of subwavelength, low-Q resonators …
Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than 150 MW/cm^ 2 shows strong free-carrier absorption saturation at temperatures of 300 K and 200 …