Low-frequency noise in downscaled silicon transistors: Trends, theory and practice
O Marinov, MJ Deen, JA Jiménez-Tejada - Physics Reports, 2022 - Elsevier
By the continuing downscaling of sub-micron transistors in the range of few to sub-
decananometers, we focus on the increasing relative level of the low-frequency noise in …
decananometers, we focus on the increasing relative level of the low-frequency noise in …
Silicon crystal growth and wafer technologies
G Fisher, MR Seacrist, RW Standley - Proceedings of the IEEE, 2012 - ieeexplore.ieee.org
Silicon substrates form the foundation of modern microelectronics. Whereas the first 50
years of silicon wafer technology were primarily driven by the microelectronics industry …
years of silicon wafer technology were primarily driven by the microelectronics industry …
Modeling, Simulation and Analysis of Surface Potential and Threshold Voltage: Application to High-K Material HfO2 Based FinFET
In this study, an analytical model for surface potential and threshold voltage for undoped (or
lightly) doped tri-gate Fin Field Effect Transistor (TG-FinFET) is proposed and validated …
lightly) doped tri-gate Fin Field Effect Transistor (TG-FinFET) is proposed and validated …
[HTML][HTML] A surface potential model for tri-gate metal oxide semiconductor field effect transistor: analysis below 10 nm channel length
In this study, an analytical model of Tri-gate metal-oxide-semiconductor field effect transistor
(TGMOSFET) for short channel lengths below 10 nm is suggested and Technology computer …
(TGMOSFET) for short channel lengths below 10 nm is suggested and Technology computer …
Semianalytical modeling of short-channel effects in lightly doped silicon trigate MOSFETs
A Tsormpatzoglou, CA Dimitriadis… - IEEE transactions on …, 2008 - ieeexplore.ieee.org
A simple analytical expression of the 3-D potential distribution along the channel of lightly
doped silicon trigate MOSFETs in weak inversion is derived, based on a perimeter-weighted …
doped silicon trigate MOSFETs in weak inversion is derived, based on a perimeter-weighted …
Charge-Based Trans-Capacitance Model for SiO2/HfO2 Based Nano Scale Trigate FinFET Including Quantum Mechanical Effect
A charge based trans-capacitance model is proposed for undoped or lightly doped Trigate
FinFET. The drain current continuity principle and the Ward-Dutton linear charge partition …
FinFET. The drain current continuity principle and the Ward-Dutton linear charge partition …
Tri-gate heterojunction SOI Ge-FinFETs
This paper proposes structures of tri-gate heterojunction (HJ) FinFETs with different
configuration of gate dielectric and gate material stacks: Single Gate Material Single …
configuration of gate dielectric and gate material stacks: Single Gate Material Single …
Statistical dependence of gate metal work function on various electrical parameters for an n-channel Si step-FinFET
This paper presents a 3-D statistical simulation study of an n-channel Si step-FinFET due to
workfunction variability depending on grain orientation of metal gate. The statistical …
workfunction variability depending on grain orientation of metal gate. The statistical …
On the design of p-channel step-FinFET at sub-10nm node: a parametric analysis
This paper presents a three dimensional (3-D) statistical simulation study of a 7 nm
technology node SOI p-channel step-FinFET and compares with that of a conventional …
technology node SOI p-channel step-FinFET and compares with that of a conventional …
Absorption coefficient and relative refractive index change for a double δ-doped GaAs MIGFET-like structure: Electric and magnetic field effects
JC Martínez-Orozco, KA Rodríguez-Magdaleno… - Superlattices and …, 2016 - Elsevier
In this work we present theoretical results for the electronic structure as well as for the
absorption coefficient and relative refractive index change for an asymmetric double δ …
absorption coefficient and relative refractive index change for an asymmetric double δ …