Ultrashallow doping is required for both classical field-effect transistors in integrated circuits
and revolutionary quantum devices in quantum computing. In this review, we give a brief …

Sharply defined dopant profiles and low resistivity are highly desired qualities in the
microelectronic industry, and more recently, in the development of an all epitaxial Si: P …

By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon
host, a two-dimensional electron gas is formed within the dopant region. Quantum …

Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth
enable the patterning of highly phosphorus-doped silicon (Si: P) monolayers (ML) with …

Abstract Three-dimensional (3D) control of dopant profiles in silicon is a critical requirement
for fabricating atomically precise transistors. We demonstrate conductance modulation …

By suppressing an undesirable surface Umklapp process, it is possible to resolve the two
most occupied states (1Γ and 2Γ) in a buried two-dimensional electron gas (2DEG) in …

We present a study of the phonon and impurity interactions in a shallow two dimensional
electron gas formed in Si (001). A highly conductive ultra-narrow n-type dopant δ-layer …

Abrupt dopant profiles and low resistivity are highly sought after qualities in the silicon
microelectronics industry and, more recently, in the development of an all epitaxial Si: P …

In this paper we demonstrate the fabrication of multiple, narrow, and closely spaced δ-doped
P layers in Ge. The P profiles are obtained by repeated phosphine adsorption onto …

Density functional theory is used to quantify the interaction of a pair of 1 4-monolayer
phosphorus δ-doped layers in silicon. We investigate changes in the electronic structure as …