Power optimized SRAM cell with high radiation hardened for aerospace applications
The SRAM cells suffer from soft errors under high radiation environment like aerospace and
satellite applications. Few radiations hardened based popular cells are 12T Dice and 12T …
satellite applications. Few radiations hardened based popular cells are 12T Dice and 12T …
Investigation of radiation hardened TFET SRAM cell for mitigation of single event upset
This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel
field effect transistor (DG TFET). The mitigation technique for the data recovery after the …
field effect transistor (DG TFET). The mitigation technique for the data recovery after the …
Radiation-induced soft error analysis of SRAMs in SOI FinFET technology: A device to circuit approach
This paper presents a comprehensive analysis of radiation-induced soft errors of SRAMs
designed in SOI FinFET technology. For this purpose, we propose a cross layer approach …
designed in SOI FinFET technology. For this purpose, we propose a cross layer approach …
Single event performance of FED based SRAMs using numerical simulation
S PanneerSelvam, SK Pal, PV Chandramani… - Microelectronics …, 2023 - Elsevier
In this work, single event performance of field effect diode (FED) devices have been
investigated. Three variations of FED structures have been taken up for the study, and they …
investigated. Three variations of FED structures have been taken up for the study, and they …
Soft error analysis on junctionless ringFET structures and junctionless ringFET-based inverter circuits using numerical device modeling
M Ramya, KK Nagarajan - Microelectronics Reliability, 2024 - Elsevier
The performance of junctionless ringFETs under heavy ion irradiation is investigated
utilizing 3D TCAD simulations. The vulnerable location of the ringFET device is identified by …
utilizing 3D TCAD simulations. The vulnerable location of the ringFET device is identified by …
SET analysis of silicon nanotube FET
GD Jayakumar, R Srinivasan - Journal of Computational Electronics, 2017 - Springer
In this work, the response of the Si nanotube (SiNT) field-effect transistor (FET) to heavy-ion
irradiation is investigated using three-dimensional (3D) numerical simulations. The single …
irradiation is investigated using three-dimensional (3D) numerical simulations. The single …
Soft-Error-Aware Radiation-Hardened Ge-DLTFET-Based SRAM Cell Design
P Raikwal, P Kumar, M Panchore, P Dwivedi, K Cecil - Electronics, 2023 - mdpi.com
In this paper, a soft-error-aware radiation-hardened 6T SRAM cell has been implemented
using germanium-based dopingless tunnel FET (Ge DLTFET). In a circuit level simulation …
using germanium-based dopingless tunnel FET (Ge DLTFET). In a circuit level simulation …
Investigation of single event transients on RingFET using 3D TCAD simulations
M Ramya, KK Nagarajan - Silicon, 2023 - Springer
In this work, the effect of heavy ion radiation on ringFET structures with gate lengths of 32 nm
and 20 nm is explored using 3D TCAD simulations. The sensitive position of the device is …
and 20 nm is explored using 3D TCAD simulations. The sensitive position of the device is …
SEU study of 4T, 6T, 7T, 8T, 10T MOSFET based SRAM using TCAD simulation
YV Bhuvaneshwari, NP Sai, NV Kumar… - International …, 2014 - ieeexplore.ieee.org
In this paper radiation performance of 4T, 6T, 7T, 8T and 10T MOSFET based-SRAMs are
studied using TCAD simulations. The minimum dose (critical dose) required to flip contents …
studied using TCAD simulations. The minimum dose (critical dose) required to flip contents …
45nm bit-interleaving differential 10T low leakage FinFET based SRAM with column-wise write access control
On-chip SRAM array occupies a large area in the microprocessor ICs. This enforces the
technology to reach nano-scale domain. In this domain, minimizing the short channel effects …
technology to reach nano-scale domain. In this domain, minimizing the short channel effects …