This review paper presents an overview of readout architectures and analog-to-digital
converters (ADCs) for 3D-stacked CMOS image sensors (CIS) with their advantages and …

A CMOS lock-in pixel image sensor with embedded storage diodes and lateral electric field
modulation (LEFM) of photo-generated charge is developed for fluorescence lifetime …

A programmable sub-nanosecond time-gated four-tap CMOS lock-in pixel (LIP) image
sensor that uses an in-pixel pulse generator (PG) is developed for time-resolved (TR) …

This paper presents a time-resolved CMOS image sensor with draining-only modulation
(DOM) pixels, for time-domain fluorescence lifetime imaging. In the DOM pixels using a …

This article presents a fully integrated, wide linear dynamic range (DR) optical sensor array
combining linear and single-photon avalanche diode (SPAD) operation within each pixel. A …

A backside-illuminated complementary metal-oxide-semiconductor (CMOS) image sensor
with 4.0 μm voltage domain global shutter (GS) pixels has been fabricated in a 45 nm/65 nm …

In this paper, we describe a newly developed 3.4 μm pixel pitch global shutter CMOS image
sensor (CIS) with dual in-pixel charge domain memories (CDMEMs) has about 5.3 M …

A low read noise 8T global shutter pixel for high speed CMOS image sensor is proposed in
this paper. The pixel has a pixel level sample-and-hold circuit and an in-pixel amplifier …

A 320 240 indirect time-of-flight (i-ToF) image sensor with a 5.6-two-tap 1.5-V pump gate
modulation pixel has been designed. Novel characteristics, such as the optimized pinned …

This paper presents the design and implementation of a time-resolved CMOS image sensor
with a high-speed lateral electric field modulation (LEFM) gating structure for time domain …