TE Dyer, NL Brockie - US Patent 9,948,314, 2018 - Google Patents
Vapor cells and methods for making the same are presented, in which a cell cavity is completely filled with aqueous alkali metal azide solution and the solution is dried at a …
JA Herbsommer, AJ Fruehling, SJ Jacobs - US Patent 10,364,144, 2019 - Google Patents
Disclosed examples provide gas cells and a method of fabricating a gas cell, including forming a cavity in a first substrate, forming a first conductive material on a sidewall of the …
M Yamamoto, T Nagao - US Patent 10,048,329, 2018 - Google Patents
A reduced size/thickness magnetic detection device includes: a substrate; and a magneto- impedance element at one substrate surface side and including a magneto-sensitive wire …
SJ Jacobs, JA Herbsommer, AJ Fruehling - US Patent 10,370,760, 2019 - Google Patents
Described examples include a method of fabricating a gas cell, including forming a cavity in a first substrate, providing a nonvolatile precursor material in the cavity of the first substrate …
The magnetization dynamics in ZnO: Ag/NiFe heterostructures has been investigated through magnetoimpedance measurements. By annealing the ZnO: Ag layer during the …
T Sohier, S Borel, JP Michel, G Simon - US Patent 11,978,708, 2024 - Google Patents
US11978708B2 - Chip or system-in-package protection using the GMI effect - Google Patents US11978708B2 - Chip or system-in-package protection using the GMI effect …
JA Herbsommer, HO Ali, B Haroun, Y Tang… - US Patent …, 2023 - Google Patents
US11600581B2 - Packaged electronic device and multilevel lead frame coupler - Google Patents US11600581B2 - Packaged electronic device and multilevel lead frame coupler …
S Lavangkul, S Chevacharoenkul - US Patent 12,105,161, 2024 - Google Patents
An integrated fluxgate device includes a substrate that includes a dielectric layer. A fluxgate core is located over the dielectric layer. Lower windings are disposed in a lower metal level …
H Sugiyama, J Tanigawa, M Ishii, T Shouda - US Patent 10,627,457, 2020 - Google Patents
However, it is not easy to make an MI element so that the impedance characteristic is such as to monotonously decrease with the zero magnetic field as the peak as described in JP-A …