Characterization of Geometric Leakage Current of $\hbox {GeO} _ {2} $ Isolation and Effect...

[PDF] googleapis.com

Bottom channel isolation in nanosheet transistors

RH Chao, CH Lee, CW Yeung, J Zhang - US Patent 10,930,793, 2021 - Google Patents
Provided is a nanosheet semiconductor device. In embodi ments of the invention, the
nanosheet semiconductor device includes a channel nanosheet formed over a substrate …
被引用次数：16 相关文章 所有 4 个版本
[PDF] googleapis.com

Bottom channel isolation in nanosheet transistors

RH Chao, CH Lee, CW Yeung, J Zhang - US Patent 10,804,410, 2020 - Google Patents
Provided is a nanosheet semiconductor device. In embodiments of the invention, the
nanosheet semiconductor device includes a channel nanosheet formed over a substrate …
被引用次数：12 相关文章 所有 4 个版本