Hf0. 5Zr0. 5O2/HfO2/Hf0. 5Zr0. 5O2 Laminated Thin Films and CF4 Plasma Passivation for Improved Memory and Synaptic Characteristics of Ferroelectric Field Effect …
In this study, we demonstrate significant advancements in hafnium oxide based ferroelectric
field-effect transistors (FeFET) by integrating two engineering methods: laminated …
field-effect transistors (FeFET) by integrating two engineering methods: laminated …
Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications
The effect of W and WO3 electrodes on the ferroelectric characteristics of HZO (Zr-doped
HfO2)-based MFM (metal-ferroelectric-metal) capacitors was investigated. During the …
HfO2)-based MFM (metal-ferroelectric-metal) capacitors was investigated. During the …
Impact of the Crystal Structure of Interlayer on the Properties of Zr‐Doped Hafnia‐Based Ferroelectric Capacitor
In this work, the effect of interlayer on the ferroelectric properties of Hf0. 5Zr0. 5O2 (HZO)‐
based metal–ferroelectric–metal (MFM) capacitor is investigated. In detail, a 1 nm thick …
based metal–ferroelectric–metal (MFM) capacitor is investigated. In detail, a 1 nm thick …