Materials science challenges to graphene nanoribbon electronics

V Saraswat, RM Jacobberger, MS Arnold - ACS nano, 2021 - ACS Publications
Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …

Nanofabrication by electron beam lithography and its applications: A review

Y Chen - Microelectronic Engineering, 2015 - Elsevier
This review covers a wide range of nanofabrication techniques developed for
nanoelectronic devices, nanophotonic metamaterials and other nanostructures, based on …

Atomic layer deposition on 2D materials

HG Kim, HBR Lee - Chemistry of Materials, 2017 - ACS Publications
2D materials are layered crystalline materials and are the most attractive nanomaterials due
to their potentials in next-generation electronics. Because most 2D materials are atomically …

Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

W Sik Hwang, M Remskar, R Yan, V Protasenko… - Applied physics …, 2012 - pubs.aip.org
We report the realization of field-effect transistors (FETs) made with chemically synthesized
multilayer crystal semiconductor WS 2. The Schottky-barrier FETs demonstrate ambipolar …

Localized charge carriers in graphene nanodevices

D Bischoff, A Varlet, P Simonet, M Eich… - Applied Physics …, 2015 - pubs.aip.org
Graphene—two-dimensional carbon—is a material with unique mechanical, optical,
chemical, and electronic properties. Its use in a wide range of applications was therefore …

Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates

WS Hwang, P Zhao, K Tahy, LO Nyakiti, VD Wheeler… - APL materials, 2015 - pubs.aip.org
We report the realization of top-gated graphene nanoribbon field effect transistors
(GNRFETs) of∼ 10 nm width on large-area epitaxial graphene exhibiting the opening of a …

Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene

WS Hwang, K Tahy, X Li, HG Xing… - Applied Physics …, 2012 - pubs.aip.org
Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have
been fabricated by electron beam lithography using a wafer-scale chemical vapor …

Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene

LO Nyakiti, VD Wheeler, NY Garces, RL Myers-Ward… - Mrs Bulletin, 2012 - cambridge.org
Epitaxial graphene (EG) has attracted considerable interest because of its extraordinary
properties and ability to be synthesized on the wafer scale. These attributes have enabled …

Contacting and gating 2-D nanomaterials

Z Cheng, K Price, AD Franklin - IEEE Transactions on Electron …, 2018 - ieeexplore.ieee.org
Two-dimensional (2-D) nanomaterials provide opportunities for a wide range of applications.
In order to harness their usefulness, understanding and controlling the interface between 2 …

Room-temperature graphene-nanoribbon tunneling field-effect transistors

WS Hwang, P Zhao, SG Kim, R Yan… - npj 2D Materials and …, 2019 - nature.com
Controlled, tunable, and reversible negative-differential resistance (NDR) is observed in
lithographically defined, atomically thin semiconducting graphene nanoribbon (GNR)-gated …