Methods for forming an eIDRAM with replacement metal gate technology and the resulting
device are disclosed. Embodiments include forming first and second dummy electrodes on a …

Embodiments of a three-dimensional capacitor for a memory device and fabrication methods
are disclosed. The method includes forming, on a first side of a first substrate, a peripheral …

H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating
or switching and having potential barriers; Capacitors or resistors having potential barriers …

A memory structure including a substrate, a memory cell, and a transistor is provided. The
substrate includes a memory cell region and a peripheral circuit region. The memory cell is …