Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials
J Hegedüs, SR Elliott - Nature materials, 2008 - nature.com
Abstract Ge–Sb–Te materials are used in optical DVDs and non-volatile electronic
memories (phase-change random-access memory). In both, data storage is effected by fast …
memories (phase-change random-access memory). In both, data storage is effected by fast …
Insights into the structure of the stable and metastable compounds
Using first-principles calculations, we identify the mechanisms that lead to the lowest energy
structures for the stable and metastable (GeTe) m (Sb 2 Te 3) n (GST) compounds, namely …
structures for the stable and metastable (GeTe) m (Sb 2 Te 3) n (GST) compounds, namely …
Vacancy structures and melting behavior in rock-salt GeSbTe
Abstract Ge-Sb-Te alloys have been widely used in optical/electrical memory storage.
Because of the extremely fast crystalline-amorphous transition, they are also expected to …
Because of the extremely fast crystalline-amorphous transition, they are also expected to …
Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5
Abstract GeTe-Sb2Te3 pseudobinary system, especially Ge2Sb2Te5 alloy, is the most
desirable material to be commercialized in phase change random access memory. Directly …
desirable material to be commercialized in phase change random access memory. Directly …
From phase-change materials to thermoelectrics?
MN Schneider, T Rosenthal, C Stiewe, O Oeckler - 2010 - degruyter.com
Metastable tellurides play an important role as phase-change materials in data storage
media and non-vol atile RAM devices. The corresponding crystalline phases with very …
media and non-vol atile RAM devices. The corresponding crystalline phases with very …
Epitaxial formation of cubic and trigonal Ge-Sb-Te thin films with heterogeneous vacancy structures
Abstract Preparation of epitaxial Ge-Sb-Te (GST) thin films with heterogeneous vacancy
structures is of special interest for data storage applications such as non-volatile random …
structures is of special interest for data storage applications such as non-volatile random …
Structure of amorphous : alloys and optical storage
The amorphous structure of Ge 8 Sb 2 Te 11, an alloy used in the Blu-ray Disc, the de facto
successor to digital versatile disk (DVD) optical storage, has been characterized by large …
successor to digital versatile disk (DVD) optical storage, has been characterized by large …
Structure of the Ge–Sb–Te phase-change materials studied by theory and experiment
We have studied the structure of GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 compounds using
theoretical and experimental means. Based on ab initio calculations, we propose the …
theoretical and experimental means. Based on ab initio calculations, we propose the …
Ab initio study on influence of dopants on crystalline and amorphous Ge2Sb2Te5
The pronounced effects of dopants such as Si, N, and O atoms, on material properties of Ge
2 Sb 2 Te 5 are investigated at the atomic level using ab initio calculations. In the crystalline …
2 Sb 2 Te 5 are investigated at the atomic level using ab initio calculations. In the crystalline …
Superlattice-like Sb50Se50/Ga30Sb70 thin films for high-speed and high density phase change memory application
Y Hu, X Feng, S Li, T Lai, S Song, Z Song… - Applied Physics …, 2013 - pubs.aip.org
Multi-level phase change character of superlattice-like (SLL) Sb 50 Se 50/Ga 30 Sb 70 thin
films was investigated through in-situ film resistance measurement. SLL structure of the thin …
films was investigated through in-situ film resistance measurement. SLL structure of the thin …