Broad band single germanium nanowire photodetectors with surface oxide-controlled high optical gain
We have investigated photoconductive properties of single germanium nanowires (NWs) of
diameter< 100 nm in the spectral range of 300–1100 nm and in the broad band near …
diameter< 100 nm in the spectral range of 300–1100 nm and in the broad band near …
Investigation of factors affecting electrical contacts on single germanium nanowires
S Sett, K Das, AK Raychaudhuri - Journal of Applied Physics, 2017 - pubs.aip.org
We report an experimental investigation of the quality of electrical contacts made on single
Germanium nanowires (grown using Au catalyst from vapor) using Cr/Au contact pads. The …
Germanium nanowires (grown using Au catalyst from vapor) using Cr/Au contact pads. The …
High-sensitivity and self-driven photodetectors based on Ge–CdS core–shell heterojunction nanowires via atomic layer deposition
Z Sun, Z Shao, X Wu, T Jiang, N Zheng, J Jie - CrystEngComm, 2016 - pubs.rsc.org
Core–shell p–n heterojunction nanowires (NWs) hold great promise for optoelectronic
applications due to the large effective junction area and minimized carrier recombination …
applications due to the large effective junction area and minimized carrier recombination …
Rapid formation of single crystalline Ge nanowires by anodic metal assisted etching
Germanium nanowires are produced by a novel approach, combining two well known
electrochemical and metal assisted chemical etching. The metal assisted etching procedure …
electrochemical and metal assisted chemical etching. The metal assisted etching procedure …
[图书][B] Towards Reconfigurable Electronics by Functionality-Enhanced Circuits and Germanium Nanowire Devices
J Trommer - 2017 - books.google.com
For more than five decades digital integrated circuits have become more efficient with every
technology generation. This trend has been mainly driven by the downscaling of the …
technology generation. This trend has been mainly driven by the downscaling of the …
A Triode Device with a Gate Controllable Schottky Barrier: Germanium Nanowire Transistors and Their Applications
Electrical contacts often dominate charge transport properties at the nanoscale because of
considerable differences in nanoelectronic device interfaces arising from unique geometric …
considerable differences in nanoelectronic device interfaces arising from unique geometric …
Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature
C Li, J Xu, W Li, S Sun, X Jiang, K Chen - Journal of Vacuum Science & …, 2012 - pubs.aip.org
The hydrogenated amorphous Ge films were prepared by plasma enhanced chemical vapor
deposition technique. Post-thermal annealing was applied to obtain nano-crystalline Ge (nc …
deposition technique. Post-thermal annealing was applied to obtain nano-crystalline Ge (nc …
Structural and electrical properties of laser-crystallized nanocrystalline Ge films and nanocrystalline Ge/SiNx multilayers
Abstract Nanocrystalline Ge (nc-Ge) single layers and nc-Ge/SiN x multilayers are prepared
by laser annealing amorphous Ge (a-Ge) films and a-Ge/SiN x multilayers. The …
by laser annealing amorphous Ge (a-Ge) films and a-Ge/SiN x multilayers. The …
Zinc oxide/copper oxide heterogeneous nanowire preparation and application in uv sensor
In this paper, we investigate the hydrothermal synthesis of zinc oxide (ZnO)/copper oxide
(CuO) heterojunction nanostructures. Uniform ZnO nanowires are grown on ITO slides with …
(CuO) heterojunction nanostructures. Uniform ZnO nanowires are grown on ITO slides with …
Shape transition of endotaxial islands growth from kinetically constrained to equilibrium regimes
A comprehensive study of Fe grown on Ge (001) substrates has been conducted at elevated
temperatures, ranging from 350 to 675° C. All iron germinide islands, with the same …
temperatures, ranging from 350 to 675° C. All iron germinide islands, with the same …