The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

In this study, we investigated phase separation and long-range atomic ordering phenomena
in InGaN alloys produced by molecular beam epitaxy. Films grown at substrate temperatures …

The experimental study of InN and In-rich InGaN by a number of structural, optical and
electrical methods is reviewed. Recent advances in thin film growth have produced single …

Emission mechanisms of a device-quality quantum well (QW) structure and bulk three
dimensional (3D) InGaN materials grown on sapphire substrates without any epitaxial lateral …

We present first-principles calculations of the thermodynamic and structural properties of
cubic In x Ga 1− x N and Al x Ga 1− x N alloys. They are based on the generalized …

The lattice dynamics of random A x B 1− x N alloys (A, B= A l, G a, In) is studied with a
method based on the modified random-element isodisplacement (MREI) and a rigid-ion …

We present the results of optical studies of the properties of In x Ga 1− x N epitaxial layers
(0< x< 0.2) grown by metalorganic chemical vapor deposition. The effects of alloying on the …

The microdisplays for augmented reality and virtual reality require ultrasmall micro light-
emitting-diodes (μLEDs) with a dimension of≤ 5 μm. Furthermore, the microdisplays also …

Micro-LEDs have been hailed as the next generation display technology due to the
advantages of high brightness, high ambient contrast ratio, and high reliability. The In x Ga 1 …