III‐nitride semiconductors have attracted considerable attention in recent years owing to
their excellent physical properties and wide applications in solid‐state lighting, flat‐panel …

Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …

We demonstrate large area fully flexible blue LEDs based on core/shell InGaN/GaN
nanowires grown by MOCVD. The fabrication relies on polymer encapsulation, nanowire lift …

There have been rapidly increasing demands for flexible lighting apparatus, and micrometer-
scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in
recent years. Although the technology seemed to be difficult to reproduce by other labs at …

Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam
epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to …

Remote epitaxy is a very promising technique for the preparation of single-crystal thin films
of flexibly transferred III–V group semiconductors. However, the epilayer nucleation …

We report the first demonstration of flexible white phosphor-converted light emitting diodes
(LEDs) based on p–n junction core/shell nitride nanowires. GaN nanowires containing …

In recent years, a novel epitaxial method based on Quasi-van der Waals (QvdW) force to
epitaxy three-dimensional (3D) nitride semiconductors on two-dimensional (2D) materials …