Electrical transport mechanisms in amorphous silicon/crystalline silicon germanium heterojunction solar cell: impact of passivation layer in conversion efficiency

E Kadri, M Krichen, R Mohammed, A Zouari… - Optical and Quantum …, 2016 - Springer
The dark current–voltage of the Au/n+(a-Si: H)/n (SiGe)/p (c-Si)/Ag heterojunction structure
have been investigated in order to determinate the electrical conduction mechanisms. The …

Characterization and photovoltaic performance of organic device based on AlPcCl/p-Si heterojunction

IM Soliman, MM El-Nahass, BA Khalifa - Synthetic Metals, 2015 - Elsevier
Abstract Analysis of electrical properties Au/AlPcCl/p-Si/Al as p–p+ heterojunction was
studied. The dark forward current–voltage characteristics showed a thermionic emission …

Carrier transport mechanisms and photodetector characteristics of Ag/TiOPc/p-Si/Al hybrid heterojunction

HA Afify, MM El-Nahass, AS Gadallah… - Materials Science in …, 2015 - Elsevier
Hybrid heterojunction device was fabricated by employing a p-type Si and a thin film of
titanyl phthalocyanine (TiOPc). The dark current density–voltage characteristics of the …

Carrier transport mechanisms and photovoltaic performance of Ag/MoOx/Ag/MoOx/n-Si/C60/Al heterojunction solar cell

MM Shehata, MM Makhlouf - Journal of Materials Science: Materials in …, 2024 - Springer
Silicon heterojunction (SHJ) technology marks a notable development in the photovoltaic
sector, paving the way for solar cells with very high efficiency. At its core, SHJ technology is …

Preparation and optoelectronic performance of 2, 7, 12, 17-tetra-tert-butyl-5, 10, 15, 20-tetraaza-21H, 23H-porphine-CuS films for photovoltaic applications

SI Qashou, AAA Darwish, I Ghabar - Dyes and Pigments, 2023 - Elsevier
This work intends to study the effect of the additional inorganic CuS layer between the ITO-
contact and the organic 2, 7, 12, 17-tetra-tert-butyl-5, 10, 15, 20-tetraaza-21H, 23H-porphine …

Current conduction mechanisms in Au/a-Si:H(n+)/SiGe(n)/c-Si(p)/Ag hetero-junction solar cells

M Krichen, E Kadri - Phase Transitions, 2022 - Taylor & Francis
The dark current–voltage characteristics I− V of the fabricated Au/a-Si: H (n+)/SiGe (n)/c-Si
(p)/Ag hetero-junction are investigated at temperatures ranging from 80 to 300 K to …

Fabrication, electrical and photovoltaic characteristics of perylene-66 based diodes (comparative study)

MM El-Nahass, AAM Farag, NM Khosifan… - Synthetic Metals, 2015 - Elsevier
In this work, two diodes of Au/perylene-66/p-Si/Al and Au/perylene-66/TiO 2/p-Si/Al were
prepared by conventional thermal evaporation technique. Temperature-dependence of the …

Junction parameters and characterization of Au/n-Ge15In5Se80/p-Si/Al heterojunction

MM El-Nahass, MH Ali, EAA El-Shazly, IT Zedan - Applied Physics A, 2016 - Springer
The analysis of the electrical properties of Au/n-Ge 15 In 5 Se 80/p-Si/Al heterojunction is
examined. I–V characteristics show diode-like behavior. The series resistance is found to …

[PDF][PDF] Current Transport Mechanisms of Au/n-GeSe4/p-Si/Al Heterojunctions

MH Ali - curresweb.com
In this report, Au/n-GeSe4/p-Si/Al heterojunction is studied. The IV characteristics were
studied in the temperature range 308-373 K. The junction parameters were investigated …