IM Soliman, MM El-Nahass, BA Khalifa - Synthetic Metals, 2015 - Elsevier
Abstract Analysis of electrical properties Au/AlPcCl/p-Si/Al as p–p+ heterojunction was studied. The dark forward current–voltage characteristics showed a thermionic emission …
Hybrid heterojunction device was fabricated by employing a p-type Si and a thin film of titanyl phthalocyanine (TiOPc). The dark current density–voltage characteristics of the …
MM Shehata, MM Makhlouf - Journal of Materials Science: Materials in …, 2024 - Springer
Silicon heterojunction (SHJ) technology marks a notable development in the photovoltaic sector, paving the way for solar cells with very high efficiency. At its core, SHJ technology is …
This work intends to study the effect of the additional inorganic CuS layer between the ITO- contact and the organic 2, 7, 12, 17-tetra-tert-butyl-5, 10, 15, 20-tetraaza-21H, 23H-porphine …
M Krichen, E Kadri - Phase Transitions, 2022 - Taylor & Francis
The dark current–voltage characteristics I− V of the fabricated Au/a-Si: H (n+)/SiGe (n)/c-Si (p)/Ag hetero-junction are investigated at temperatures ranging from 80 to 300 K to …
In this work, two diodes of Au/perylene-66/p-Si/Al and Au/perylene-66/TiO 2/p-Si/Al were prepared by conventional thermal evaporation technique. Temperature-dependence of the …
The analysis of the electrical properties of Au/n-Ge 15 In 5 Se 80/p-Si/Al heterojunction is examined. I–V characteristics show diode-like behavior. The series resistance is found to …
In this report, Au/n-GeSe4/p-Si/Al heterojunction is studied. The IV characteristics were studied in the temperature range 308-373 K. The junction parameters were investigated …