Recent progress on extended wavelength and split-off band heterostructure infrared detectors
The use of multilayer semiconductor heterojunction structures has shown promise in infrared
detector applications. Several heterostructures with innovative compositional and …
detector applications. Several heterostructures with innovative compositional and …
Effects of barrier energy offset and gradient in extended wavelength infrared detectors
The extended wavelength infrared (IR) photodetectors are the new class of III-V
semiconductor heterojunction-based photodetectors that can detect incoming radiation with …
semiconductor heterojunction-based photodetectors that can detect incoming radiation with …
Study of infrared photodetectors with wavelength extension mechanism
The III-V semiconductor heterostructure-based photodetectors have been studied
extensively for infrared detection, from near-infrared (NIR) to far-infrared (FIR) region. Due to …
extensively for infrared detection, from near-infrared (NIR) to far-infrared (FIR) region. Due to …
[PDF][PDF] InAs/GaSb 超晶格/GaSb 体材料中短波双色红外探测器
马晓乐， 郭杰， 郝瑞亭， 魏国帅， 王国伟， 徐应强… - 红外与毫米波 …, 2021 - researching.cn
采用GaSb 体材料和InAs/GaSb 超晶格分别作为短波与中波吸收材料, 外延生长制备了NIPPIN
型短中双色红外探测器. HRXRD 及AFM 测试表明, InAs/GaSb 超晶格零级峰和GaSb …
型短中双色红外探测器. HRXRD 及AFM 测试表明, InAs/GaSb 超晶格零级峰和GaSb …
Studies on plasma assisted molecular beam epitaxial growth of GaN-based multilayer heterostructures on Si for photodetector application
Y Zheng - 2019 - dr.ntu.edu.sg
III-Nitride materials have gathered enormous attention and undergone fast development,
due to superior properties such as wide band gap, high stability, high electron motilities …
due to superior properties such as wide band gap, high stability, high electron motilities …
Mid-/Short-Wave dual-band infrared detector based on InAs/GaSb superlattice/GaSb bulk materials
马晓乐， 郭杰， 郝瑞亭， 魏国帅， 王国伟… - Journal of Infrared …, 2021 - journal.sitp.ac.cn
采用 GaSb 体材料和 InAs/GaSb 超晶格分别作为短波与中波吸收材料, 外延生长制备了 NIPPIN
型短中双色红外探测器. HRXRD 及 AFM 测试表明, InAs/GaSb 超晶格零级峰和 GaSb 峰半峰宽 …
型短中双色红外探测器. HRXRD 及 AFM 测试表明, InAs/GaSb 超晶格零级峰和 GaSb 峰半峰宽 …
Threshold wavelength extension with dark current reduction in infrared detectors
AGU Perera, H Ghimire - Infrared Remote Sensing and …, 2019 - spiedigitallibrary.org
The standard threshold wavelength (λ t) of an Infrared (IR) detector is related to the energy
gap Δ is given by Δ= 1.24/λ t. Here, we summarize the results of a new class of IR detectors …
gap Δ is given by Δ= 1.24/λ t. Here, we summarize the results of a new class of IR detectors …
Material And Techniques For Extended-Wavelength And Split-Off Band Infrared Detectors
D Chauhan - 2018 - scholarworks.gsu.edu
Abstract p-GaAs/Al x Ga 1-x As heterostructure-based extended-wavelength infrared
photodetectors have been experimentally studied in great detail. Unlike the conventional IR …
photodetectors have been experimentally studied in great detail. Unlike the conventional IR …
[PDF][PDF] ScholarWorks@ Georgia State Universit y
D Chauhan - 2018 - scholarworks.gsu.edu
ABSTRACT p-GaAs/AlxGa1-xAs heterostructure-based extended-wavelength infrared
photodetectors have been experimentally studied in great detail. Unlike the conventional IR …
photodetectors have been experimentally studied in great detail. Unlike the conventional IR …