[HTML][HTML] Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN
The recently demonstrated semiconductor grafting approach allows one to create an abrupt,
low interface-trap-density heterojunction between a high-quality p-type single-crystalline …
low interface-trap-density heterojunction between a high-quality p-type single-crystalline …
[PDF][PDF] III-Nitride Materials: Properties, Growth, and Applications
Y Li - Crystals, 2024 - mdpi.com
Since the activation of magnesium (Mg) in p-type gallium nitride (GaN)[1, 2], striking
progress has been made in III-nitride materials in terms of properties, growth, and …
progress has been made in III-nitride materials in terms of properties, growth, and …