Crystalline silicon (c-Si) photovoltaics has long been considered energy intensive and
costly. Over the past decades, spectacular improvements along the manufacturing chain …

This paper discusses developments in the mitigation of light-induced degradation caused by
boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid …

Taking into account a wide variety of recent results from studies of silicon crystal growth and
high temperature wafer heat treatments, a consistent picture of intrinsic point defect behavior …

The understanding and development of advanced hydrogenation processes for silicon solar
cells are presented. Hydrogen passivation is incorporated into virtually all silicon solar cells …

We discuss the importance of gettering and hydrogenation for next‐generation silicon solar
cells in the context of industrial cell fabrication. Gettering and hydrogenation play a vital role …

Hydrogen passivation, such as forming gas annealing and alneal (aluminum anneal)
process, has been investigated for high efficient crystalline silicon solar cell structures …

Using new techniques which manage intrinsic point defect concentrations during the growth
of silicon crystals and subsequent processing of silicon wafers, it is possible to achieve two …

Quantitative measurements of the oxygen precipitate rate as a function of annealing were
made in Czochralski-grown silicon wafers that contained different initial concentrations of …

We present progress to develop low-cost interdigitated back contact solar cells with pc-
Si/SiO 2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is …

This paper investigates the potential of three different methods-tabula rasa (TR), phosphorus
diffusion gettering (PDG), and hydrogenation, for improving the carrier lifetime in n-type …