Mechanism of NO2 detection in carbon nanotube field effect transistor chemical sensors
We report an experimental method that clearly determines the sensing mechanism of carbon-
nanotube field effect transistors. The nanotube/electrode contacts are covered with a thick …
nanotube field effect transistors. The nanotube/electrode contacts are covered with a thick …
Gas sensing mechanism of carbon nanotubes: From single tubes to high-density networks
Gas sensing in carbon nanotubes is still poorly understood. Possible mechanisms are
charge transfer between adsorbed gas molecules and the nanotubes or gas-induced …
charge transfer between adsorbed gas molecules and the nanotubes or gas-induced …
Ambient effects on photogating in MoS2 photodetectors
Atomically thin transition metal dichalcogenides (TMDs) are ideal candidates for ultrathin
optoelectronics that are flexible and semitransparent. Photodetectors based on TMDs show …
optoelectronics that are flexible and semitransparent. Photodetectors based on TMDs show …
Highly sensitive MoS2 photodetectors with graphene contacts
Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs)
are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although …
are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although …
A novel methane sensor based on porous SnO2 nanorods: room temperature to high temperature detection
A Biaggi-Labiosa, F Sola, M Lebrón-Colón… - …, 2012 - iopscience.iop.org
We report for the first time a novel room temperature methane (CH 4) sensor fabricated
using porous tin oxide (SnO 2) nanorods as the sensing material. The porous SnO 2 …
using porous tin oxide (SnO 2) nanorods as the sensing material. The porous SnO 2 …
Record endurance for single-walled carbon nanotube–based memory cell
We study memory devices consisting of single-walled carbon nanotube transistors with
charge storage at the SiO 2/nanotube interface. We show that this type of memory device is …
charge storage at the SiO 2/nanotube interface. We show that this type of memory device is …
Origins of noise in individual semiconducting carbon nanotube field-effect transistors
The temperature dependence of 1∕ f noise in individual semiconducting carbon nanotube
(CNT) field-effect transistors is used to estimate the distribution of activation energies of the …
(CNT) field-effect transistors is used to estimate the distribution of activation energies of the …
[HTML][HTML] Optimized photolithographic fabrication process for carbon nanotube devices
SM Khamis, RA Jones, AT Johnson - Aip Advances, 2011 - pubs.aip.org
We have developed a photolithographic process for the fabrication of large arrays of single
walled carbon nanotube transistors with high quality electronic properties that rival those of …
walled carbon nanotube transistors with high quality electronic properties that rival those of …
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation
G Fedorov, A Kardakova, I Gayduchenko… - Applied Physics …, 2013 - pubs.aip.org
We report on the voltage response of carbon nanotube devices to sub-terahertz (THz)
radiation. The devices contain carbon nanotubes (CNTs), which are over their length …
radiation. The devices contain carbon nanotubes (CNTs), which are over their length …
High-crystalline single-and double-walled carbon nanotube mats grown by chemical vapor deposition
G Lamura, A Andreone, Y Yang… - The Journal of …, 2007 - ACS Publications
High-quality mats of single-and double-walled carbon nanotubes (SWNT, DWNT) have
been grown by the catalytic chemical vapor deposition (CVD) technique. Field-emission …
been grown by the catalytic chemical vapor deposition (CVD) technique. Field-emission …