HfO2-based ferroelectrics: From enhancing performance, material design, to applications
H Chen, X Zhou, L Tang, Y Chen, H Luo… - Applied Physics …, 2022 - pubs.aip.org
Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …
storage, and low energy consumption to fulfill the rapid developments of big data, the …
Thin‐film ferroelectrics
Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
Vibrational fingerprints of ferroelectric HfO2
Hafnia (HfO2) is a promising material for emerging chip applications due to its high-κ
dielectric behavior, suitability for negative capacitance heterostructures, scalable …
dielectric behavior, suitability for negative capacitance heterostructures, scalable …
Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing
A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is
demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiOx/W (14 …
demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiOx/W (14 …
Ferroelectricity in HfO2 from a Coordination Number Perspective
Ferroelectricity observed in thin-film HfO2, either doped with Si, Al, and so forth or in the Hf0.
5Zr0. 5O2 form, has gained great technical significance. While a trilinear coupling between …
5Zr0. 5O2 form, has gained great technical significance. While a trilinear coupling between …
Improved polarization and endurance in ferroelectric Hf 0.5 Zr 0.5 O 2 films on SrTiO 3 (110)
The metastable orthorhombic phase of Hf0. 5Zr0. 5O2 (HZO) can be stabilized in thin films
on La0. 67Sr0. 33MnO3 (LSMO) buffered (001)-oriented SrTiO3 (STO) by intriguing epitaxy …
on La0. 67Sr0. 33MnO3 (LSMO) buffered (001)-oriented SrTiO3 (STO) by intriguing epitaxy …
Stabilization of the epitaxial rhombohedral ferroelectric phase in by surface energy
A El Boutaybi, T Maroutian, L Largeau, S Matzen… - Physical Review …, 2022 - APS
Doped HfO 2 and HfO 2-ZrO 2 compounds are gaining significant interest thanks to their
ferroelectric properties in ultrathin films. Here, we show that ZrO 2 could be a playground for …
ferroelectric properties in ultrathin films. Here, we show that ZrO 2 could be a playground for …
Flexoelectricity-stabilized ferroelectric phase with enhanced reliability in ultrathin La: HfO2 films
P Jiao, H Cheng, J Li, H Chen, Z Liu, Z Xi… - Applied Physics …, 2023 - pubs.aip.org
Doped HfO 2 thin films exhibit robust ferroelectric properties even for nanometric
thicknesses, are compatible with current Si technology, and thus have great potential for the …
thicknesses, are compatible with current Si technology, and thus have great potential for the …
Anisotropic Strain‐Mediated Symmetry Engineering and Enhancement of Ferroelectricity in Hf0.5Zr0.5O2/La0.67Sr0.33MnO3 Heterostructures
Hafnium‐based binary oxides have attracted considerable attention due to their robust
ferroelectricity at the nanoscale and compatibility with silicon‐based electronic technologies …
ferroelectricity at the nanoscale and compatibility with silicon‐based electronic technologies …