Endurance improvement of GaN bipolar charge trapping memory with back gate injection
A GaN-based tunnel-oxide-free non-volatile memory device with fast program/erase (P/E)
speed and a long retention time has been recently reported, but the high voltage for program …
speed and a long retention time has been recently reported, but the high voltage for program …
GaN non-volatile memory based on junction barrier-controlled bipolar charge trapping
A tunnel-oxide-free GaN-based non-volatile memory (NVM) device is proposed to untangle
the trilemma among speed, retention, and endurance in the implementation of conventional …
the trilemma among speed, retention, and endurance in the implementation of conventional …
A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology
H Xie, W Zhang, P Zhou… - IEEE Electron …, 2024 - ieeexplore.ieee.org
A novel single-transistor dynamic random access memory (1T-DRAM) named IS-DRAM (in-
situ sensing DRAM) which combines non-destructive reading with compact footprint is …
situ sensing DRAM) which combines non-destructive reading with compact footprint is …
Investigation of device physics and modeling of semi-floating gate image sensor cell
Y Yao, L Liu, ZY Ye, MZ Lin, ZY Su, J Wu… - Microelectronic …, 2019 - Elsevier
In this paper, an image sensor cell based on the semi-floating gate (SFG) concept is
fabricated and measured. The physics and modeling of the proposed device are studied …
fabricated and measured. The physics and modeling of the proposed device are studied …
A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application
C Wang, X Zhao, H Liu, X Chao, H Zhu, Q Sun - Electronics, 2021 - mdpi.com
Despite the continuous downscaling of complementary metal–oxide–semiconductor
(CMOS) devices, various scenarios of technology have also been proposed toward the …
(CMOS) devices, various scenarios of technology have also been proposed toward the …
Investigation of dynamic threshold voltage behavior in semi-floating gate transistor for normally-off AlGaN/GaN HEMT
J Wu, LQ Zhang, Y Yao, MZ Lin, ZY Ye… - IEEE Journal of the …, 2017 - ieeexplore.ieee.org
In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor
was analyzed. Varying threshold voltage (V th) during switching was observed. This …
was analyzed. Varying threshold voltage (V th) during switching was observed. This …
A Semi-Floating Gate Transistors In-Memory Computing design with 40.14 TOPS/W for matrix-multiplication with frequently updated weight
Y Lin, Y Wang, X Hu, J Feng, G Wen… - 2021 IEEE 14th …, 2021 - ieeexplore.ieee.org
To overcome the memory wall problem, in-memory computing (IMC) is proposed to
accelerate matrix multiplication. While existing IMC designs encounter problems in scenes …
accelerate matrix multiplication. While existing IMC designs encounter problems in scenes …
Analysis and modeling of the semi-floating transistor based 1T pixel in CMOS image sensors
J Gao, Y Li, Z Gao, Z Shi - Microelectronics journal, 2017 - Elsevier
A semi-floating gate transistor (SFGT) based 1 T pixel can achieve the same functions as the
traditional 3 T active pixel sensor (APS). The SFGT APS improves the fill factor and the pixel …
traditional 3 T active pixel sensor (APS). The SFGT APS improves the fill factor and the pixel …
A Semi-Floating Gate Memory with Tensile Stress for Enhanced Performance
With the continuous scaling down of devices, traditional one-transistor one-capacitor
dynamic random access memory (1T-1C DRAM) has encountered great challenges …
dynamic random access memory (1T-1C DRAM) has encountered great challenges …
A novel vertical semi-floating gate transistor for high-density ultrafast memory
ZY Su, J Wu, Y Yao, MZ Lin, ZY Ye… - 2017 IEEE 12th …, 2017 - ieeexplore.ieee.org
A novel vertical device structure based on semi-floating gate concept is reported and
simulated by Sentaurus technology computer aided design (TCAD) in this paper. This …
simulated by Sentaurus technology computer aided design (TCAD) in this paper. This …